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ISL9V5045S3ST-F085C PDF预览

ISL9V5045S3ST-F085C

更新时间： 2024-09-30 11:12:19
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 1226K
描述
IGBT, 450V, 43A, 1.25V, 500mJ, D2PAKEcoSPARK® I, N-Channel Ignition

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ISL9V5045S3ST-F085C 数据手册

 浏览型号ISL9V5045S3ST-F085C的Datasheet PDF文件第2页浏览型号ISL9V5045S3ST-F085C的Datasheet PDF文件第3页浏览型号ISL9V5045S3ST-F085C的Datasheet PDF文件第4页浏览型号ISL9V5045S3ST-F085C的Datasheet PDF文件第5页浏览型号ISL9V5045S3ST-F085C的Datasheet PDF文件第6页浏览型号ISL9V5045S3ST-F085C的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
ECOSPARK) Ignition IGBT  
500 mJ, 450 V, N-Channel Ignition IGBT  
ISL9V5045S3ST-F085C  
2
D PAK−3  
Features  
CASE 418AJ  
• SCIS Energy = 500 mJ at T = 25°C  
J
• Logic Level Gate Drive  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
MARKING DIAGRAM  
1
Gate  
Applications  
2
$Y&Z&3&K  
V5045SC  
4
• Automotive Ignition Coil Driver Circuits  
• High Current Ignition System  
• Coil on Plug Applications  
Collector  
Collector  
3
Emitter  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Date Code (Week & Year)  
= Lot Code  
Parameter  
Symbol  
Value  
Unit  
Collector to Emitter Breakdown Voltage  
C
BV  
480  
V
CER  
(I = 1 mA)  
V5045SC  
= Specific Device Code  
Emitter to Collector Voltage − Reverse  
BV  
24  
V
ECS  
Battery Condition (I = 10 mA)  
C
I
= 39.2 A, L = 650 mHy,  
E
500  
315  
mJ  
mJ  
SCIS  
GE  
SCIS25  
Collector  
R
= 1 kW, T = 25°C (Note 1)  
C
I
= 31.1 A, L = 650 mHy,  
E
SCIS  
SCIS150  
IC25  
R
= 1 kW, T = 150°C (Note 2)  
GE  
C
R
1
Collector Current Continuous,  
at V = 4.0 V, T = 25°C  
51  
43  
A
A
Gate  
GE  
C
Collector Current Continuous,  
at V = 4.0 V, T = 110°C  
IC110  
R
2
GE  
C
Gate to Emitter Voltage Continuous  
V
10  
300  
2
V
W
GEM  
Power Dissipation Total, T = 25°C  
PD  
PD  
Emitter  
C
Power Dissipation Derating, T > 25°C  
W/°C  
°C  
C
ORDERING INFORMATION  
Operating Junction and Storage  
Temperature  
T , T  
J
−40 to  
175  
STG  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Lead Temperature for Soldering  
T
300  
260  
4
°C  
°C  
kV  
kV  
L
Purposes (1/8″ from case for 10 s)  
Reflow soldering according to  
JESD020C  
T
PKG  
HBM−Electrostatic Discharge Voltage at  
100 pF, 1500 W  
ESD  
ESD  
CDM−Electrostatic Discharge Voltage  
at 1 W  
2
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Self Clamped inductive Switching Energy (ESCIS25) of 500 mJ is based on  
the test conditions that is starting T = 25°C, L = 650 mHy, I  
= 39.2 A,  
J
SCIS  
V
= 100 V during inductor charging and V = 0 V during time in clamp.  
CC  
CC  
2. Self Clamped inductive Switching Energy (ESCIS150) of 315 mJ is based on  
the test conditions that is starting T = 150°C, L = 650 mHy, I = 31.1 A,  
J
SCIS  
V
CC  
= 100 V during inductor charging and V =0 V during time in clamp.  
CC  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
ISL9V5045S3ST−F085C/D  
May, 2022 − Rev. 1  
 
12345678

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