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ISL9V5036S3STL86Z PDF预览

ISL9V5036S3STL86Z

更新时间: 2024-11-16 21:00:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 汽车点火晶体管
页数 文件大小 规格书
8页 119K
描述
Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3

ISL9V5036S3STL86Z 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknown风险等级:5.06
外壳连接:COLLECTOR最大集电极电流 (IC):46 A
集电极-发射极最大电压:360 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:AUTOMOTIVE IGNITION
晶体管元件材料:SILICON标称断开时间 (toff):7600 ns
标称接通时间 (ton):2800 nsBase Number Matches:1

ISL9V5036S3STL86Z 数据手册

 浏览型号ISL9V5036S3STL86Z的Datasheet PDF文件第2页浏览型号ISL9V5036S3STL86Z的Datasheet PDF文件第3页浏览型号ISL9V5036S3STL86Z的Datasheet PDF文件第4页浏览型号ISL9V5036S3STL86Z的Datasheet PDF文件第5页浏览型号ISL9V5036S3STL86Z的Datasheet PDF文件第6页浏览型号ISL9V5036S3STL86Z的Datasheet PDF文件第7页 
February 2002  
ISL9V5036S3S / ISL9V5036P3  
TM  
EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT  
General Description  
Applications  
Automotive Ignition Coil Driver Circuits  
Coil- On Plug Applications  
The ISL9V5036S3S and ISL9V5036P3 are the next generation  
IGBTs that offer outstanding SCIS capability in the D² -Pak (TO-  
263) and TO-220 plastic package. These devices are intended for  
use in automotive ignition circuits, specifically as coil drivers.  
Internal diodes provide voltage clamping without the need for  
external components.  
Features  
Industry Standard D-Pak package  
o
SCIS Energy = 500mJ at T = 25 C  
J
Logic Level Gate Drive  
EcoSPARK™ devices can be custom made to specific clamp  
voltages. Contact your nearest Fairchild sales office for more  
information.  
Formerly Developmental Type 49443  
Package  
Symbol  
COLLECTOR  
JEDEC TO-263  
D²-Pak  
JEDEC TO-220AB  
R1  
R2  
G
GATE  
E
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
EMITTER  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
390  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
At Starting T = 25°C, I = 38.5A, L = 670 µHy  
SCIS  
500  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 30A, L = 670 µHy  
SCIS  
300  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
46  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
31  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
200  
W
D
C
Power Dissipation Derating T > 25°C  
1.33  
-40 to 175  
-40 to 175  
300  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2002 Fairchild Semiconductor Corporation  
ISL9V5036S3S / ISl9V5036P3 Rev. B, February 2002  

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