是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-262 |
包装说明: | ROHS COMPLIANT, PLASTIC PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 8.02 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 46 A | 集电极-发射极最大电压: | 420 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最大降落时间(tf): | 15000 ns |
门极发射器阈值电压最大值: | 2.2 V | 门极-发射极最大电压: | 12 V |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 7000 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | AUTOMOTIVE IGNITION | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 13600 ns | 标称接通时间 (ton): | 2800 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ISL9V5036S3_NL | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-262AA, LEAD FREE | |
ISL9V5036S3S | FAIRCHILD |
获取价格 |
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT | |
ISL9V5036S3S_04 | FAIRCHILD |
获取价格 |
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT | |
ISL9V5036S3S_NL | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMP | |
ISL9V5036S3SL99Z | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC, | |
ISL9V5036S3ST | FAIRCHILD |
获取价格 |
EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT | |
ISL9V5036S3ST | ONSEMI |
获取价格 |
IGBT,360V,31A,1.17V,500mJ,D2PAKEcoSPARK® II,N | |
ISL9V5036S3ST_NL | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMP | |
ISL9V5036S3ST-F085C | ONSEMI |
获取价格 |
IGBT, 360V, 31A, 1.17V, 500mJ, D2PAKEcoSPARK® | |
ISL9V5036S3STL86Z | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC, |