Datasheet > ISL9V5036S3S_04

ISL9V5036S3S_04

更新时间： 2024-11-16 03:15:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
8页	170K
描述
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT

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ISL9V5036S3S_04 数据手册

October 2004

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT

General Description

Applications

•

Automotive Ignition Coil Driver Circuits

Coil-On Plug Applications

The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next

generation IGBTs that offer outstanding SCIS capability in the D²-

Pak (TO-263) and TO-220 plastic package. These devices are

intended for use in automotive ignition circuits, specifically as coil

drivers. Internal diodes provide voltage clamping without the need

for external components.

Features

•

Industry Standard D -Pak package

SCIS Energy = 500mJ at T = 25 C

Logic Level Gate Drive

EcoSPARK™ devices can be custom made to specific clamp

voltages. Contact your nearest Fairchild sales office for more

information.

Formerly Developmental Type 49443

Package

Symbol

COLLECTOR

JEDEC TO-263AB

D²-Pak

JEDEC TO-220AB

JEDEC TO-262AA

R₁

R₂

GATE

EMITTER

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

Device Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Collector to Emitter Breakdown Voltage (I = 1 mA)

Ratings

Units

390

CER

ECS

Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)

At Starting T = 25°C, I = 38.5A, L = 670 µHy

SCIS

500

SCIS25

At Starting T = 150°C, I = 30A, L = 670 µHy

SCIS

300

SCIS150

Collector Current Continuous, At T = 25°C, See Fig 9

C25

Collector Current Continuous, At T = 110°C, See Fig 9

C110

Gate to Emitter Voltage Continuous

±10

GEM

Power Dissipation Total T = 25°C

250

Power Dissipation Derating T > 25°C

1.67

-40 to 175

300

W/°C

°C

Operating Junction Temperature Range

Storage Junction Temperature Range

STG

Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)

Max Lead Temp for Soldering (Package Body for 10s)

Electrostatic Discharge Voltage at 100pF, 1500Ω

260

pkg

ESD

ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C3, October 2004

12 3 4 5 6 7 8

中文翻译

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与ISL9V5036S3S_04相关器件

型号	品牌	获取价格	描述	数据表
ISL9V5036S3S_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
ISL9V5036S3SL99Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V5036S3ST	FAIRCHILD	获取价格	EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036S3ST	ONSEMI	获取价格	IGBT，360V，31A，1.17V，500mJ，D2PAKEcoSPARK® II，N
ISL9V5036S3ST_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
ISL9V5036S3ST-F085C	ONSEMI	获取价格	IGBT, 360V, 31A, 1.17V, 500mJ, D2PAKEcoSPARK®
ISL9V5036S3STL86Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V5036S3STL99Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V5036S3STS62Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V5045S3	FAIRCHILD	获取价格	EcoSPARK N-Channel Ignition IGBT

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