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ISL9V5036S3_NL

更新时间： 2024-11-16 19:50:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 汽车点火栅晶体管
页数 文件大小 规格书
8页 318K
描述
Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3

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ISL9V5036S3_NL 技术参数

生命周期：Obsolete零件包装代码：TO-262AA
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：unknown风险等级：5.61
外壳连接：COLLECTOR最大集电极电流 (IC)：46 A
集电极-发射极最大电压：360 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
JESD-609代码：e3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：AUTOMOTIVE IGNITION晶体管元件材料：SILICON
标称断开时间 (toff)：13600 ns标称接通时间 (ton)：2800 ns
Base Number Matches：1

ISL9V5036S3_NL 数据手册

 浏览型号ISL9V5036S3_NL的Datasheet PDF文件第2页浏览型号ISL9V5036S3_NL的Datasheet PDF文件第3页浏览型号ISL9V5036S3_NL的Datasheet PDF文件第4页浏览型号ISL9V5036S3_NL的Datasheet PDF文件第5页浏览型号ISL9V5036S3_NL的Datasheet PDF文件第6页浏览型号ISL9V5036S3_NL的Datasheet PDF文件第7页 
November 2009  
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3  
EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT  
General Description  
Applications  
•
•
Automotive Ignition Coil Driver Circuits  
Coil-On Plug Applications  
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next  
generation IGBTs that offer outstanding SCIS capability in the D²-  
Pak (TO-263) and TO-220 plastic package. These devices are  
intended for use in automotive ignition circuits, specifically as coil  
drivers. Internal diodes provide voltage clamping without the need  
for external components.  
Features  
2
•
•
•
Industry Standard D -Pak package  
o
SCIS Energy = 500mJ at T = 25 C  
J
Logic Level Gate Drive  
Qualified to AEC Q101  
RoHS Compliant  
EcoSPARK devices can be custom made to specific clamp  
®
voltages. Contact your nearest Fairchild sales office for more  
information.  
•
•
Formerly Developmental Type 49443  
Package  
Symbol  
COLLECTOR  
JEDEC TO-263AB  
D²-Pak  
JEDEC TO-220AB  
JEDEC TO-262AA  
E
C
E
G
C
G
R1  
R2  
GATE  
G
E
EMITTER  
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
390  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
At Starting T = 25°C, I = 38.5A, L = 670 µHy  
SCIS  
500  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 30A, L = 670 µHy  
SCIS  
300  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
46  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
31  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
250  
W
D
C
Power Dissipation Derating T > 25°C  
1.67  
-40 to 175  
-40 to 175  
300  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2009 Fairchild Semiconductor Corporation  
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C4, November 2009  
12345678

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