5秒后页面跳转
捷配首页

Datasheet > 晶体管 > IGBT> ISL9V5036S3S
ISL9V5036S3S PDF预览

ISL9V5036S3S

更新时间： 2024-09-28 22:26:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管双极性晶体管栅汽车点火
页数 文件大小 规格书
8页 201K
描述
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT

阅读下载

中文翻译

获取价格

ISL9V5036S3S 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：D2PAK
包装说明：ROHS COMPLIANT, D2PAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.33Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：46 A
集电极-发射极最大电压：420 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大降落时间（tf）：15000 ns门极发射器阈值电压最大值：2.2 V
门极-发射极最大电压：12 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：200 W
认证状态：Not Qualified最大上升时间（tr）：7000 ns
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AUTOMOTIVE IGNITION晶体管元件材料：SILICON
标称断开时间 (toff)：13600 ns标称接通时间 (ton)：2800 ns
Base Number Matches：1

ISL9V5036S3S 数据手册

 浏览型号ISL9V5036S3S的Datasheet PDF文件第2页浏览型号ISL9V5036S3S的Datasheet PDF文件第3页浏览型号ISL9V5036S3S的Datasheet PDF文件第4页浏览型号ISL9V5036S3S的Datasheet PDF文件第5页浏览型号ISL9V5036S3S的Datasheet PDF文件第6页浏览型号ISL9V5036S3S的Datasheet PDF文件第7页 
September 2002  
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3  
TM  
EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT  
General Description  
Applications  
•
•
Automotive Ignition Coil Driver Circuits  
Coil- On Plug Applications  
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next  
generation IGBTs that offer outstanding SCIS capability in the D² -  
Pak (TO-263) and TO-220 plastic package. These devices are  
intended for use in automotive ignition circuits, specifically as coil  
drivers. Internal diodes provide voltage clamping without the need  
for external components.  
Features  
•
•
•
Industry Standard D-Pak package  
o
SCIS Energy = 500mJ at T = 25 C  
J
Logic Level Gate Drive  
EcoSPARK™ devices can be custom made to specific clamp  
voltages. Contact your nearest Fairchild sales office for more  
information.  
Formerly Developmental Type 49443  
Package  
Symbol  
COLLECTOR  
JEDEC TO-263AB  
D²-Pak  
JEDEC TO-220AB  
JEDEC TO-262AA  
E
C
E
G
C
G
R1  
R2  
GATE  
G
E
EMITTER  
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
390  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
At Starting T = 25°C, I = 38.5A, L = 670 µHy  
SCIS  
500  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 30A, L = 670 µHy  
SCIS  
300  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
46  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
31  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
250  
W
D
C
Power Dissipation Derating T > 25°C  
1.67  
-40 to 175  
-40 to 175  
300  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2002 Fairchild Semiconductor Corporation  
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C1, September 2002  
12345678

中文翻译

下载PDF

ISL9V5036S3S 替代型号

型号 品牌 替代类型 描述 数据表
HGT1S20N35G3VLS FAIRCHILD

类似代替

 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
ISL9V5036S3ST ONSEMI

功能相似

 IGBT，360V，31A，1.17V，500mJ，D2PAKEcoSPARK® II，N

与ISL9V5036S3S相关器件

型号 品牌 获取价格 描述 数据表
ISL9V5036S3S_04 FAIRCHILD

获取价格

 		EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036S3S_NL FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
ISL9V5036S3SL99Z FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V5036S3ST FAIRCHILD

获取价格

 		EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036S3ST ONSEMI

获取价格

 		IGBT，360V，31A，1.17V，500mJ，D2PAKEcoSPARK® II，N
ISL9V5036S3ST_NL FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
ISL9V5036S3ST-F085C ONSEMI

获取价格

 		IGBT, 360V, 31A, 1.17V, 500mJ, D2PAKEcoSPARK®
ISL9V5036S3STL86Z FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V5036S3STL99Z FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V5036S3STS62Z FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,

与ISL9V5036S3S相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证