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ISL9V3040X3ST-F085C PDF预览

ISL9V3040X3ST-F085C

更新时间： 2024-11-17 02:52:43
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 3121K
描述
EcoSPARK Ignition IGBT

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ISL9V3040X3ST-F085C 数据手册

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ISL9V3040x3ST-F085C  
EcoSPARKꢀ Ignition IGBT  
300 mJ, 400 V, N−Channel Ignition IGBT  
Features  
• SCIS Energy = 300 mJ at T = 25°C  
J
• Logic Level Gate Drive  
www.onsemi.com  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
COLLECTOR  
Applications  
• Automotive Ignition Coil Driver Circuits  
• High Current Ignition System  
• Coil on Plug Application  
R
1
GATE  
R
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
EMITTER  
Symbol  
Parameter  
Value  
Unit  
V
BV  
400  
Collector to Emitter Breakdown  
Voltage (IC = 1 mA)  
CER  
V
mJ  
mJ  
A
BV  
24  
300  
170  
21  
Emitter to Collector Voltage − Reverse  
ECS  
Battery Condition (IC = 10 mA)  
E
ISCIS = 14.2 A, L = 3.0 mHy,  
SCIS25  
RGE = 1 KW, T = 25°C (Note 1)  
C
E
ISCIS = 10.6 A, L = 3.0 mHy,  
SCIS150  
RGE = 1 KW, T = 150°C (Note 2)  
C
2
DPAK3  
CASE 369AS  
D PAK−3  
IC25  
Collector Current Continuous  
CASE 418AJ  
at VGE = 4.0 V, T = 25°C  
C
A
IC110  
17  
Collector Current Continuous  
MARKING DIAGRAM  
at VGE = 4.0 V, T = 110°C  
C
V
W
V
10  
Gate to Emitter Voltage Continuous  
GEM  
AYWW  
XXX  
XXXXXG  
PD  
Power Dissipation Total, T = 25°C  
150  
1
C
W/°C  
°C  
Power Dissipation Derating, T > 25°C  
C
T , T  
J
−55 to +175  
Operating Junction and Storage  
Temperature  
STG  
A
Y
WW  
XXXX  
G
= Assembly Location  
= Year  
= Work Week  
= Device Code  
= Pb−Free Package  
°C  
°C  
kV  
kV  
T
L
300  
260  
4
Lead Temperature for Soldering  
Purposes (1/8” from case for 10 s)  
T
Reflow Soldering according to  
JESD020C  
PKG  
ESD  
HBM−Electrostatic Discharge Voltage  
at 100 pF, 1500 W  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2  
of this data sheet.  
2
CDM−Electrostatic Discharge Voltage  
at 1 W  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on  
the test conditions that is starting T = 25°C, L = 3 mHy, ISCIS = 14.2 A,  
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.  
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on  
the test conditions that is starting T = 150°C, L = 3mHy, ISCIS = 10.6 A,  
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
August, 2019 − Rev. 1  
ISL9V3040−F085C//D  
 
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