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ISL9V5036P3_11

更新时间： 2024-09-29 12:23:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
7页 354K
描述
EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT

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ISL9V5036P3_11 数据手册

 浏览型号ISL9V5036P3_11的Datasheet PDF文件第2页浏览型号ISL9V5036P3_11的Datasheet PDF文件第3页浏览型号ISL9V5036P3_11的Datasheet PDF文件第4页浏览型号ISL9V5036P3_11的Datasheet PDF文件第5页浏览型号ISL9V5036P3_11的Datasheet PDF文件第6页浏览型号ISL9V5036P3_11的Datasheet PDF文件第7页 
August 2011  
ISL9V5036P3_F085  
®
EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT  
General Description  
Applications  
•
•
Automotive Ignition Coil Driver Circuits  
Coil-On Plug Applications  
The ISL9V5036P3_F085 is the next generation IGBT that offer  
outstanding SCIS capability in the TO-220 plastic package.  
This device is intended for use in automotive ignition circuit,  
specifically as coil driver. Internal diode provide voltage clamping  
without the need for external component.  
Features  
•
•
•
Industry Standard TO-220 package  
o
SCIS Energy = 500mJ at T = 25 C  
J
Logic Level Gate Drive  
Qualified to AEC Q101  
RoHS Compliant  
EcoSPARK  
®
devices can be custom made to specific clamp  
•
•
voltages. Contact your nearest Fairchild sales office for more  
information.  
Formerly Developmental Type 49443  
Package  
Symbol  
COLLECTOR  
JEDEC TO-220AB  
E
C
G
R1  
R2  
GATE  
EMITTER  
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
390  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
At Starting T = 25°C, I = 38.5A, L = 670 µHy  
SCIS  
500  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 30A, L = 670 µHy  
SCIS  
300  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
46  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
31  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
250  
W
D
C
Power Dissipation Derating T > 25°C  
1.67  
-40 to 175  
-40 to 175  
300  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
www.fairchildsemi.com  
©2011 Fairchild Semiconductor Corporation  
ISL9V5036P3_F085 Rev. C5, August 2011  
1234567

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与ISL9V5036P3_11相关器件

型号 品牌 获取价格 描述 数据表
ISL9V5036P3_F085 FAIRCHILD

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 		ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036P3-F085 ONSEMI

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 		IGBT，360V，31A，1.17V，500mJ，TO-220，EcoSPARK® I，
ISL9V5036S3 FAIRCHILD

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 		EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036S3_NL FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-262AA, LEAD FREE
ISL9V5036S3S FAIRCHILD

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 		EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036S3S_04 FAIRCHILD

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 		EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036S3S_NL FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
ISL9V5036S3SL99Z FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V5036S3ST FAIRCHILD

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 		EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036S3ST ONSEMI

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 		IGBT，360V，31A，1.17V，500mJ，D2PAKEcoSPARK® II，N

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