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ISL9V3040D3S PDF预览

ISL9V3040D3S

更新时间: 2024-11-15 22:26:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管双极性晶体管汽车点火
页数 文件大小 规格书
8页 191K
描述
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

ISL9V3040D3S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:PLASTIC,DPAK-3针数:3
Reach Compliance Code:not_compliant风险等级:5.13
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):21 A集电极-发射极最大电压:450 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最大降落时间(tf):15000 ns
门极发射器阈值电压最大值:2.2 V门极-发射极最大电压:12 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W认证状态:Not Qualified
最大上升时间(tr):7000 ns子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AUTOMOTIVE IGNITION
晶体管元件材料:SILICON标称断开时间 (toff):7600 ns
标称接通时间 (ton):2800 nsBase Number Matches:1

ISL9V3040D3S 数据手册

 浏览型号ISL9V3040D3S的Datasheet PDF文件第2页浏览型号ISL9V3040D3S的Datasheet PDF文件第3页浏览型号ISL9V3040D3S的Datasheet PDF文件第4页浏览型号ISL9V3040D3S的Datasheet PDF文件第5页浏览型号ISL9V3040D3S的Datasheet PDF文件第6页浏览型号ISL9V3040D3S的Datasheet PDF文件第7页 
April 2003  
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /  
ISL9V3040S3  
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT  
Formerly Developmental Type 49362  
General Description  
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and  
ISL9V3040S3 are the next generation ignition IGBTs that offer  
Applications  
Automotive Ignition Coil Driver Circuits  
Coil- On Plug Applications  
outstanding SCIS capability in the space saving D-Pak (TO-252), as  
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-  
220 plastic packages. This device is intended for use in automotive  
ignition circuits, specifically as a coil driver. Internal diodes provide  
voltage clamping without the need for external components.  
Features  
Space saving D-Pak package availability  
EcoSPARK™ devices can be custom made to specific clamp  
voltages. Contact your nearest Fairchild sales office for more  
information.  
o
SCIS Energy = 300mJ at T = 25 C  
J
Logic Level Gate Drive  
Package  
Symbol  
JEDEC TO-263AB  
JEDEC TO-220AB  
E
D²-Pak  
C
G
COLLECTOR  
G
E
R1  
R2  
GATE  
JEDEC TO-262AA  
JEDEC TO-252AA  
D-Pak  
E
C
G
G
EMITTER  
E
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
430  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
At Starting T = 25°C, I = 14.2A, L = 3.0 mHy  
SCIS  
300  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 10.6A, L = 3.0 mHy  
SCIS  
170  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
21  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
17  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
150  
W
D
C
Power Dissipation Derating T > 25°C  
1.0  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
-40 to 175  
-40 to 175  
300  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2003 Fairchild Semiconductor Corporation  
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003  

ISL9V3040D3S 替代型号

型号 品牌 替代类型 描述 数据表
ISL9V3040D3ST ONSEMI

类似代替

400 V、17 A、1.58 V、300 mJ、DPAKEcoSPARK® I、N 沟道
ISL9V3040D3ST FAIRCHILD

类似代替

EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
ISL9V3040D3ST_NL FAIRCHILD

功能相似

Insulated Gate Bipolar Transistor, 21A I(C), 450V V(BR)CES, N-Channel, TO-252AA, PLASTIC,

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