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ISL9V3040D3STV PDF预览

ISL9V3040D3STV

更新时间： 2024-11-17 11:14:35
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 725K
描述
IGBT，N 沟道，点火，DPAK，17A，1.58V，300mJ EcoSPARK® I

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中文翻译

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ISL9V3040D3STV 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：not_compliantFactory Lead Time：43 weeks 1 day
风险等级：5.73JESD-609代码：e3
湿度敏感等级：1端子面层：Tin (Sn)
Base Number Matches：1

ISL9V3040D3STV 数据手册

 浏览型号ISL9V3040D3STV的Datasheet PDF文件第2页浏览型号ISL9V3040D3STV的Datasheet PDF文件第3页浏览型号ISL9V3040D3STV的Datasheet PDF文件第4页浏览型号ISL9V3040D3STV的Datasheet PDF文件第5页浏览型号ISL9V3040D3STV的Datasheet PDF文件第6页浏览型号ISL9V3040D3STV的Datasheet PDF文件第7页 
ISL9V3040D3STV  
ECOSPARK) Ignition IGBT  
300 mJ, 400 V, N−Channel Ignition IGBT  
Features  
• SCIS Energy = 300 mJ at T = 25°C  
J
www.onsemi.com  
• Logic Level Gate Drive  
• This Device is Pb−Free and is RoHS Compliant  
• AEC−Q101 Qualified and PPAP Capable  
Applications  
• Automotive Ignition Coil Driver Circuits  
• High Current Ignition System  
• Coil on Plug Applications  
MAXIMUM RATINGS (T = 25°C Unless Otherwise Stated)  
J
Parameter  
Symbol  
Value  
Units  
4
Collector to Emitter Breakdown Voltage  
BV  
400  
V
CER  
(I = 1 mA)  
C
2
1
Emitter to Collector Voltage  
− Reverse Battery Condition (I = 10 mA)  
BV  
24  
300  
170  
21  
V
mJ  
mJ  
A
ECS  
3
C
DPAK (SINGLE GAUGE)  
CASE 369C  
ISCIS = 14.2 A, L = 3.0 mHz,  
E
SCIS25  
R
= 1 Kꢀ (Note 1), T = 25°C  
GE  
C
ISCIS = 10.6 A, L = 3.0 mHz,  
= 1 Kꢀ (Note 2), T = 150°C  
E
SCIS150  
R
GE  
C
MARKING DIAGRAM  
Collector Current Continuous,  
at V = 4.0 V, T = 25°C  
IC25  
GE  
C
ON  
AYWW  
ISL  
Collector Current Continuous,  
at V = 4.0 V, T = 110°C  
IC110  
17  
A
GE  
C
3040DG  
Gate to Emitter Voltage Continuous  
V
10  
150  
1
V
W
GEM  
Power Dissipation Total, T = 25°C  
PD  
PD  
C
ISL3040DG  
A
Y
WW  
G
= Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Power Dissipation Derating, T ꢁ 25°C  
W/°C  
°C  
C
Operating Junction and Storage  
Temperature  
T , T  
J
−55 to  
175  
STG  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
300  
°C  
Reflow soldering according to JESD020C  
T
260  
4
°C  
PKG  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
HBM−Electrostatic Discharge Voltage  
ESD  
kV  
at100 pF, 1500  
ꢀ
CDM−Electrostatic Discharge Voltage at  
ESD  
2
kV  
1
ꢀ
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Self Clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on  
the test conditions that is starting T = 25°C, L = 3 mHz, ISCIS = 14.2 A,  
J
V
= 100 V during inductor charging and V = 0 V during time in clamp.  
CC  
CC  
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on  
the test conditions that is starting T = 150°C, L = 3 mHz, ISCIS = 10.6 A,  
J
V
CC  
= 100 V during inductor charging and V = 0 V during time in clamp.  
CC  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2019 − Rev. 0  
ISL9V3040D3STV/D  
 
12345678

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