生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.15 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 21 A | 集电极-发射极最大电压: | 350 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | AUTOMOTIVE IGNITION | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 7600 ns | 标称接通时间 (ton): | 2800 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ISL9V3036S3ST | FAIRCHILD |
获取价格 |
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT | |
ISL9V3036S3ST | ONSEMI |
获取价格 |
360 V、17 A、1.58 V、300 mJ、D2PAKEcoSPARK® I、N 沟 | |
ISL9V3036S3ST-F085C | ONSEMI |
获取价格 |
IGBT, 360V, 17A, 1.58V, 300mJ, D2PAKEcoSPARK® | |
ISL9V3036S3STL86Z | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC, | |
ISL9V3036S3STL99Z | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC, | |
ISL9V3036S3STS62Z | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC, | |
ISL9V3040D3S | FAIRCHILD |
获取价格 |
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT | |
ISL9V3040D3S | ONSEMI |
获取价格 |
Insulated Gate Bipolar Transistor | |
ISL9V3040D3S | UTC |
获取价格 |
300mJ, 400V, N-CHANNEL IGNITION IGBT | |
ISL9V3040D3S_04 | FAIRCHILD |
获取价格 |
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT |