Datasheet > ISL9V3036S3ST-F085C

ISL9V3036S3ST-F085C

更新时间： 2024-11-17 11:16:03

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	997K
描述
IGBT, 360V, 17A, 1.58V, 300mJ, D2PAKEcoSPARK® I, N-Channel Ignition

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ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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与ISL9V3036S3ST-F085C相关器件

型号	品牌	获取价格	描述	数据表
ISL9V3036S3STL86Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3036S3STL99Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3036S3STS62Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3040D3S	FAIRCHILD	获取价格	EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
ISL9V3040D3S	ONSEMI	获取价格	Insulated Gate Bipolar Transistor
ISL9V3040D3S	UTC	获取价格	300mJ, 400V, N-CHANNEL IGNITION IGBT
ISL9V3040D3S_04	FAIRCHILD	获取价格	EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
ISL9V3040D3S_15	UTC	获取价格	N-CHANNEL JUNCTION FET
ISL9V3040D3SG-TA3-T	UTC	获取价格	N-CHANNEL JUNCTION FET
ISL9V3040D3SG-TF3-T	UTC	获取价格	N-CHANNEL JUNCTION FET

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