Datasheet > ISL9R860P2_09

ISL9R860P2_09

更新时间： 2024-11-16 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管
页数	文件大小	规格书
8页	330K
描述
8A, 600V Stealthâ¢ Diode

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ISL9R860P2_09 数据手册

October 2009

ISL9R860P2, ISL9R860S3ST

8A, 600V Stealth™ Diode

General Description

The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are

Stealth™ diodes optimized for low loss performance in

high frequency hard switched applications. The

Stealth™ family exhibits low reverse recovery current

(I_RRM) and exceptionally soft recovery under typical

operating conditions.

Features

• Soft Recovery . . . . . . . . . . . . . . . . . . . t_b/ t_a> 2.5

• Fast Recovery . . . . . . . . . . . . . . . . . . . . t_rr< 25ns

• Operating Temperature . . . . . . . . . . . . . . . 175^oC

• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V

• Avalanche Energy Rated

This device is intended for use as a free wheeling or

boost diode in power supplies and other power

switching applications. The low I_RRMand short t_aphase

reduce loss in switching transistors. The soft recovery

minimizes ringing, expanding the range of conditions

under which the diode may be operated without the use

of additional snubber circuitry. Consider using the

Stealth™ diode with an SMPS IGBT to provide the

most efficient and highest power density design at

lower cost.

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

Formerly developmental type TA49409.

• Snubber Diode

Package

Symbol

JEDEC TO-263AB

JEDEC TO-220AC

CATHODE

(FLANGE)

ANODE

CATHODE

(FLANGE)

N/C

ANODE

Device Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

600

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

Average Rectified Forward Current (T = 147 C)

F(AV)

Repetitive Peak Surge Current (20kHz Square Wave)

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Power Dissipation

Avalanche Energy (1A, 40mH)

Operating and Storage Temperature Range

100

°C

FRM

FSM

AVL

T , T

-55 to 175

STG

PKG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ISL9R860P2, ISL9R860S3ST Rev. C2

12 3 4 5 6 7 8

中文翻译

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与ISL9R860P2_09相关器件

型号	品牌	获取价格	描述	数据表
ISL9R860P2_NL	FAIRCHILD	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, ROHS C
ISL9R860PF2	FAIRCHILD	获取价格	8A, 600V Stealth⑩ Diode
ISL9R860PF2	SAMSUNG	获取价格	8A, 600V Stealth Diode
ISL9R860PF2	ONSEMI	获取价格	8A，600V，STEALTH™ 二极管
ISL9R860PF2_NL	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, T
ISL9R860S2	FAIRCHILD	获取价格	8A, 600V Stealth⑩ Diode
ISL9R860S3S	FAIRCHILD	获取价格	8A, 600V Stealth⑩ Diode
ISL9R860S3SL86Z	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,
ISL9R860S3SL99Z	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,
ISL9R860S3SS62Z	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,

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