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ISL9R860S3ST

更新时间： 2024-11-15 22:41:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
6页 127K
描述
8A, 600V Stealth⑩ Diode

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中文翻译

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ISL9R860S3ST 数据手册

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May 2004  
ISL9R860P2, ISL9R860S2, ISL9R860S3ST  
8A, 600V Stealth™ Diode  
General Description  
Features  
• Soft Recovery . . . . . . . . . . . . . . . . . . . t / t > 2.5  
b
a
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are  
Stealth™ diodes optimized for low loss performance in  
high frequency hard switched applications. The  
Stealth™ family exhibits low reverse recovery current  
(IRRM) and exceptionally soft recovery under typical  
operating conditions.  
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t < 25ns  
rr  
o
• Operating Temperature . . . . . . . . . . . . . . . 175 C  
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V  
• Avalanche Energy Rated  
This device is intended for use as a free wheeling or  
boost diode in power supplies and other power  
switching applications. The low IRRM and short ta phase  
reduce loss in switching transistors. The soft recovery  
minimizes ringing, expanding the range of conditions  
under which the diode may be operated without the use  
of additional snubber circuitry. Consider using the  
Stealth™ diode with an SMPS IGBT to provide the  
most efficient and highest power density design at  
lower cost.  
Applications  
• Switch Mode Power Supplies  
• Hard Switched PFC Boost Diode  
• UPS Free Wheeling Diode  
• Motor Drive FWD  
• SMPS FWD  
Formerly developmental type TA49409.  
• Snubber Diode  
Package  
Symbol  
JEDEC TO-263AB  
JEDEC TO-220AC  
JEDEC STYLE TO-262  
K
ANODE  
CATHODE  
ANODE  
CATHODE  
CATHODE  
(FLANGE)  
CATHODE  
(FLANGE)  
A
CATHODE  
(FLANGE)  
N/C  
ANODE  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
600  
Units  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
V
600  
V
V
600  
V
R
o
I
Average Rectified Forward Current (T = 147 C)  
8
A
F(AV)  
C
I
Repetitive Peak Surge Current (20kHz Square Wave)  
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
Power Dissipation  
16  
A
FRM  
I
100  
A
FSM  
P
85  
W
mJ  
°C  
D
E
Avalanche Energy (1A, 40mH)  
20  
AVL  
T , T  
Operating and Storage Temperature Range  
-55 to 175  
J
STG  
T
Maximum Temperature for Soldering  
L
T
Leads at 0.063in (1.6mm) from Case for 10s  
Package Body for 10s, See Techbrief TB334  
300  
260  
°C  
°C  
PKG  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
©2004 Fairchild Semiconductor Corporation  
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1  
123456

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ISL9R860S3ST 替代型号

型号 品牌 替代类型 描述 数据表
ISL9R860S3ST_NL FAIRCHILD

功能相似

 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, ROHS C
FFP08S60STU FAIRCHILD

功能相似

 Stealth 2 Rectifier

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