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ISL9V2040D3S_04

更新时间： 2024-11-16 03:50:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
8页 165K
描述
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT

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ISL9V2040D3S_04 数据手册

 浏览型号ISL9V2040D3S_04的Datasheet PDF文件第2页浏览型号ISL9V2040D3S_04的Datasheet PDF文件第3页浏览型号ISL9V2040D3S_04的Datasheet PDF文件第4页浏览型号ISL9V2040D3S_04的Datasheet PDF文件第5页浏览型号ISL9V2040D3S_04的Datasheet PDF文件第6页浏览型号ISL9V2040D3S_04的Datasheet PDF文件第7页 
October 2004  
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3  
TM  
EcoSPARK 200mJ, 400V, N-Channel Ignition IGBT  
General Description  
Applications  
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the  
next generation ignition IGBTs that offer outstanding SCIS  
capability in the space saving D-Pak (TO-252), as well as the  
industry standard D²-Pak (TO-263) and TO-220 plastic packages.  
This device is intended for use in automotive ignition circuits,  
specifically as a coil driver. Internal diodes provide voltage clamping  
without the need for external components.  
•
•
Automotive Ignition Coil Driver Circuits  
Coil- On Plug Applications  
Features  
•
•
•
Space saving D - Pak package available  
o
SCIS Energy = 200mJ at T = 25 C  
J
Logic Level Gate Drive  
EcoSPARK™ devices can be custom made to specific clamp  
voltages. Contact your nearest Fairchild sales office for more  
information.  
Formerly Developmental Type 49444  
Package  
Symbol  
COLLECTOR  
JEDEC TO-252AA  
D-Pak  
JEDEC TO-263AB  
D²-Pak  
JEDEC TO-220AB  
E
C
G
R1  
R2  
GATE  
G
G
E
E
EMITTER  
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
430  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
At Starting T = 25°C, I = 11.5A, L = 3.0mHy  
SCIS  
200  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 8.9A, L = 3.0mHy  
SCIS  
120  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
10  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
10  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
130  
W
D
C
Power Dissipation Derating T > 25°C  
0.87  
-40 to 175  
-40 to 175  
300  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2004 Fairchild Semiconductor Corporation  
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004  
12345678

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与ISL9V2040D3S_04相关器件

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ISL9V2040D3ST FAIRCHILD

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 		EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
ISL9V2040D3ST ONSEMI

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 		IGBT，430V，10A，1.95V，200mJ，DPAK，EcoSPARK® I，N
ISL9V2040D3STV ONSEMI

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 		IGBT, 430V, 10A, 1.95V, 200mJ, DPAKEcoSPARK®
ISL9V2040P3 FAIRCHILD

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 		EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
ISL9V2040S3S FAIRCHILD

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 		EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
ISL9V2040S3SS62Z FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 10A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V2040S3ST ONSEMI

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 		430 V、10 A、1.95 V、200 mJ、DPAKEcoSPARK® I、N 沟道
ISL9V2040S3ST FAIRCHILD

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 		EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
ISL9V2040S3STL86Z FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 10A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC,

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