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ISL9R860PF2 PDF预览

ISL9R860PF2

更新时间: 2024-09-28 03:15:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管功效局域网
页数 文件大小 规格书
6页 139K
描述
8A, 600V Stealth⑩ Diode

ISL9R860PF2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220F
包装说明:ROHS COMPLIANT, TO-220F, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

ISL9R860PF2 数据手册

 浏览型号ISL9R860PF2的Datasheet PDF文件第2页浏览型号ISL9R860PF2的Datasheet PDF文件第3页浏览型号ISL9R860PF2的Datasheet PDF文件第4页浏览型号ISL9R860PF2的Datasheet PDF文件第5页浏览型号ISL9R860PF2的Datasheet PDF文件第6页 
April 2003  
ISL9R860PF2  
8A, 600V Stealth™ Diode  
General Description  
Features  
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2  
• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . trr < 25ns  
• Operating Temperature. . . . . . . . . . . . . . . . . . 150oC  
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V  
• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV  
• Avalanche Energy Rated  
The ISL9R860PF2 is a Stealth™ diode optimized for  
low loss performance in high frequency hard switched  
applications. The Stealth™ family exhibits low reverse  
recovery current (IRRM) and exceptionally soft recovery  
under typical operating conditions.  
This device is intended for use as a free wheeling or  
boost diode in power supplies and other power  
switching applications. The low IRRM and short ta phase  
reduce loss in switching transistors. The soft recovery  
minimizes ringing, expanding the range of conditions  
under which the diode may be operated without the use  
of additional snubber circuitry. Consider using the  
Stealth™ diode with an SMPS IGBT to provide the  
most efficient and highest power density design at  
lower cost.  
Applications  
• Switch Mode Power Supplies  
• Hard Switched PFC Boost Diode  
• UPS Free Wheeling Diode  
• Motor Drive FWD  
• SMPS FWD  
Formerly developmental type TA49409.  
• Snubber Diode  
Package  
Symbol  
TO-220F  
K
A
CATHODE  
ANODE  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
600  
Units  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
V
600  
V
V
600  
V
R
o
I
Average Rectified Forward Current (T = 75 C)  
8
A
F(AV)  
C
I
Repetitive Peak Surge Current (20kHz Square Wave)  
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
Power Dissipation  
16  
A
FRM  
I
100  
A
FSM  
P
26  
W
mJ  
°C  
D
E
Avalanche Energy (1A, 40mH)  
20  
AVL  
T , T  
Operating and Storage Temperature Range  
-55 to 150  
J
STG  
T
Maximum Temperature for Soldering  
L
Leads at 0.063in (1.6mm) from Case for 10s  
300  
°C  
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
©2003 Fairchild Semiconductor Corporation  
ISL9R860PF2 Rev. A  

ISL9R860PF2 替代型号

型号 品牌 替代类型 描述 数据表
15ETL06FPPBF VISHAY

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