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STTH8R06FP PDF预览

STTH8R06FP

更新时间: 2024-11-01 22:33:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压
页数 文件大小 规格书
7页 115K
描述
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

STTH8R06FP 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AC包装说明:ROHS COMPLIANT, PLASTIC, TO-220FPAC, 2 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.04其他特性:FREE WHEELING DIODE
应用:HIGH VOLTAGE ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.8 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.045 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTH8R06FP 数据手册

 浏览型号STTH8R06FP的Datasheet PDF文件第2页浏览型号STTH8R06FP的Datasheet PDF文件第3页浏览型号STTH8R06FP的Datasheet PDF文件第4页浏览型号STTH8R06FP的Datasheet PDF文件第5页浏览型号STTH8R06FP的Datasheet PDF文件第6页浏览型号STTH8R06FP的Datasheet PDF文件第7页 
®
STTH8R06D/FP/G/R  
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
K
IF(AV)  
8 A  
VRRM  
600 V  
5.5A  
IRM (typ.)  
Tj (max)  
VF (max)  
trr (max)  
175 °C  
1.8 V  
45 ns  
A
A
K
K
TO-220FPAC  
TO-220AC  
STTH8R06FP  
STTH8R06D  
FEATURES AND BENEFITS  
Ultrafast switching  
K
K
Low reverse recovery current  
Reduces switching losses  
Low thermal resistance  
A
A
NC  
DESCRIPTION  
K
NC  
The STTH8R06D/FP/G/R, which is using ST 600V  
technology, is specially suited as boost diode in  
continuous mode power factor corrections and  
hard switching conditions.  
I2PAK  
D2PAK  
STTH8R06G  
STTH8R06R  
The device is also intended for use as a free  
wheeling diode in power supplies and other power  
switching applications.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
600  
30  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
A
IF(AV)  
Average forward current δ = 0.5  
TO-220AC  
Tc = 130°C  
8
A
D2PAK / I2PAK Tc = 130°C  
TO-220FPAC Tc = 85°C  
IFSM  
Tstg  
Tj  
Surge non repetitive forward current  
Storage temperature range  
Maximum operating junction temperature  
tp = 10 ms  
Sinusoidal  
80  
A
- 65 + 175  
+ 175  
°C  
°C  
January 2002 - Ed: 2C  
1/7  

STTH8R06FP 替代型号

型号 品牌 替代类型 描述 数据表
STTH8R06DIRG STMICROELECTRONICS

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