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ISL9R860S3S

更新时间： 2024-09-27 22:24:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
6页 127K
描述
8A, 600V Stealth⑩ Diode

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中文翻译

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ISL9R860S3S 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：R-PSSO-G2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.74其他特性：FREEWHEELING DIODE, SNUBBER DIODE
应用：FAST SOFT RECOVERY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：2 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0最大非重复峰值正向电流：100 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.03 µs
子类别：Rectifier Diodes表面贴装：YES
技术：AVALANCHE端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

ISL9R860S3S 数据手册

 浏览型号ISL9R860S3S的Datasheet PDF文件第2页浏览型号ISL9R860S3S的Datasheet PDF文件第3页浏览型号ISL9R860S3S的Datasheet PDF文件第4页浏览型号ISL9R860S3S的Datasheet PDF文件第5页浏览型号ISL9R860S3S的Datasheet PDF文件第6页 
May 2004  
ISL9R860P2, ISL9R860S2, ISL9R860S3ST  
8A, 600V Stealth™ Diode  
General Description  
Features  
• Soft Recovery . . . . . . . . . . . . . . . . . . . t / t > 2.5  
b
a
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are  
Stealth™ diodes optimized for low loss performance in  
high frequency hard switched applications. The  
Stealth™ family exhibits low reverse recovery current  
(IRRM) and exceptionally soft recovery under typical  
operating conditions.  
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t < 25ns  
rr  
o
• Operating Temperature . . . . . . . . . . . . . . . 175 C  
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V  
• Avalanche Energy Rated  
This device is intended for use as a free wheeling or  
boost diode in power supplies and other power  
switching applications. The low IRRM and short ta phase  
reduce loss in switching transistors. The soft recovery  
minimizes ringing, expanding the range of conditions  
under which the diode may be operated without the use  
of additional snubber circuitry. Consider using the  
Stealth™ diode with an SMPS IGBT to provide the  
most efficient and highest power density design at  
lower cost.  
Applications  
• Switch Mode Power Supplies  
• Hard Switched PFC Boost Diode  
• UPS Free Wheeling Diode  
• Motor Drive FWD  
• SMPS FWD  
Formerly developmental type TA49409.  
• Snubber Diode  
Package  
Symbol  
JEDEC TO-263AB  
JEDEC TO-220AC  
JEDEC STYLE TO-262  
K
ANODE  
CATHODE  
ANODE  
CATHODE  
CATHODE  
(FLANGE)  
CATHODE  
(FLANGE)  
A
CATHODE  
(FLANGE)  
N/C  
ANODE  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
600  
Units  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
V
600  
V
V
600  
V
R
o
I
Average Rectified Forward Current (T = 147 C)  
8
A
F(AV)  
C
I
Repetitive Peak Surge Current (20kHz Square Wave)  
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
Power Dissipation  
16  
A
FRM  
I
100  
A
FSM  
P
85  
W
mJ  
°C  
D
E
Avalanche Energy (1A, 40mH)  
20  
AVL  
T , T  
Operating and Storage Temperature Range  
-55 to 175  
J
STG  
T
Maximum Temperature for Soldering  
L
T
Leads at 0.063in (1.6mm) from Case for 10s  
Package Body for 10s, See Techbrief TB334  
300  
260  
°C  
°C  
PKG  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
©2004 Fairchild Semiconductor Corporation  
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1  
123456

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,
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