Datasheet > ISL9R860PF2

ISL9R860PF2

更新时间： 2024-11-15 21:55:43

品牌	Logo	应用领域
三星 - SAMSUNG		二极管功效局域网
页数	文件大小	规格书
6页	139K
描述
8A, 600V Stealth Diode

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ISL9R860PF2 数据手册

April 2003

ISL9R860PF2

8A, 600V Stealth™ Diode

General Description

Features

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t_b/ t_a> 1.2

• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . t_rr< 25ns

• Operating Temperature. . . . . . . . . . . . . . . . . . 150^oC

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V

• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV

• Avalanche Energy Rated

The ISL9R860PF2 is a Stealth™ diode optimized for

low loss performance in high frequency hard switched

applications. The Stealth™ family exhibits low reverse

recovery current (I_RRM) and exceptionally soft recovery

under typical operating conditions.

This device is intended for use as a free wheeling or

boost diode in power supplies and other power

switching applications. The low I_RRMand short t_aphase

reduce loss in switching transistors. The soft recovery

minimizes ringing, expanding the range of conditions

under which the diode may be operated without the use

of additional snubber circuitry. Consider using the

Stealth™ diode with an SMPS IGBT to provide the

most efficient and highest power density design at

lower cost.

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

Formerly developmental type TA49409.

• Snubber Diode

Package

Symbol

TO-220F

CATHODE

ANODE

Device Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

600

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

600

Average Rectified Forward Current (T = 75 C)

F(AV)

Repetitive Peak Surge Current (20kHz Square Wave)

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Power Dissipation

FRM

100

FSM

°C

Avalanche Energy (1A, 40mH)

AVL

T , T

Operating and Storage Temperature Range

-55 to 150

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

300

°C

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ISL9R860PF2 Rev. A

12 3 4 5 6

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与ISL9R860PF2相关器件

型号	品牌	获取价格	描述	数据表
ISL9R860PF2_NL	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, T
ISL9R860S2	FAIRCHILD	获取价格	8A, 600V Stealth⑩ Diode
ISL9R860S3S	FAIRCHILD	获取价格	8A, 600V Stealth⑩ Diode
ISL9R860S3SL86Z	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,
ISL9R860S3SL99Z	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,
ISL9R860S3SS62Z	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,
ISL9R860S3ST	FAIRCHILD	获取价格	8A, 600V Stealth⑩ Diode
ISL9R860S3ST	ONSEMI	获取价格	8A，600V，STEALTH™ 二极管
ISL9R860S3ST_NL	FAIRCHILD	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, ROHS C
ISL9R860S3STL86Z	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,

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