April 2003
ISL9R860PF2
8A, 600V Stealth™ Diode
General Description
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2
• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . trr < 25ns
• Operating Temperature. . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV
• Avalanche Energy Rated
The ISL9R860PF2 is a Stealth™ diode optimized for
low loss performance in high frequency hard switched
applications. The Stealth™ family exhibits low reverse
recovery current (IRRM) and exceptionally soft recovery
under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low IRRM and short ta phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
Formerly developmental type TA49409.
• Snubber Diode
Package
Symbol
TO-220F
K
A
CATHODE
ANODE
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
600
Units
V
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
RWM
V
600
V
V
600
V
R
o
I
Average Rectified Forward Current (T = 75 C)
8
A
F(AV)
C
I
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
16
A
FRM
I
100
A
FSM
P
26
W
mJ
°C
D
E
Avalanche Energy (1A, 40mH)
20
AVL
T , T
Operating and Storage Temperature Range
-55 to 150
J
STG
T
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
300
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A