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ISL9R860PF2 PDF预览

ISL9R860PF2

更新时间: 2024-11-15 21:55:43
品牌 Logo 应用领域
三星 - SAMSUNG 二极管功效局域网
页数 文件大小 规格书
6页 139K
描述
8A, 600V Stealth Diode

ISL9R860PF2 数据手册

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April 2003  
ISL9R860PF2  
8A, 600V Stealth™ Diode  
General Description  
Features  
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2  
• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . trr < 25ns  
• Operating Temperature. . . . . . . . . . . . . . . . . . 150oC  
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V  
• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV  
• Avalanche Energy Rated  
The ISL9R860PF2 is a Stealth™ diode optimized for  
low loss performance in high frequency hard switched  
applications. The Stealth™ family exhibits low reverse  
recovery current (IRRM) and exceptionally soft recovery  
under typical operating conditions.  
This device is intended for use as a free wheeling or  
boost diode in power supplies and other power  
switching applications. The low IRRM and short ta phase  
reduce loss in switching transistors. The soft recovery  
minimizes ringing, expanding the range of conditions  
under which the diode may be operated without the use  
of additional snubber circuitry. Consider using the  
Stealth™ diode with an SMPS IGBT to provide the  
most efficient and highest power density design at  
lower cost.  
Applications  
• Switch Mode Power Supplies  
• Hard Switched PFC Boost Diode  
• UPS Free Wheeling Diode  
• Motor Drive FWD  
• SMPS FWD  
Formerly developmental type TA49409.  
• Snubber Diode  
Package  
Symbol  
TO-220F  
K
A
CATHODE  
ANODE  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
600  
Units  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
V
600  
V
V
600  
V
R
o
I
Average Rectified Forward Current (T = 75 C)  
8
A
F(AV)  
C
I
Repetitive Peak Surge Current (20kHz Square Wave)  
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
Power Dissipation  
16  
A
FRM  
I
100  
A
FSM  
P
26  
W
mJ  
°C  
D
E
Avalanche Energy (1A, 40mH)  
20  
AVL  
T , T  
Operating and Storage Temperature Range  
-55 to 150  
J
STG  
T
Maximum Temperature for Soldering  
L
Leads at 0.063in (1.6mm) from Case for 10s  
300  
°C  
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
©2003 Fairchild Semiconductor Corporation  
ISL9R860PF2 Rev. A  

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