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ISL9R860P2 PDF预览

ISL9R860P2

更新时间: 2024-11-17 11:14:35
品牌 Logo 应用领域
安森美 - ONSEMI 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
11页 1002K
描述
8A,600V,STEALTH™ 二极管

ISL9R860P2 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:TO-220AC, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:7 weeks风险等级:1.41
其他特性:SNUBBER DIODE, FREE WHEELING DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:85 W
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED

ISL9R860P2 数据手册

 浏览型号ISL9R860P2的Datasheet PDF文件第2页浏览型号ISL9R860P2的Datasheet PDF文件第3页浏览型号ISL9R860P2的Datasheet PDF文件第4页浏览型号ISL9R860P2的Datasheet PDF文件第5页浏览型号ISL9R860P2的Datasheet PDF文件第6页浏览型号ISL9R860P2的Datasheet PDF文件第7页 
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