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ISL9R3060G2_NL PDF预览

ISL9R3060G2_NL

更新时间: 2024-09-29 13:08:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
6页 124K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 2 PIN

ISL9R3060G2_NL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
其他特性:FREEWHEELING DIODE, SNUBBER DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.1 VJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:325 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.045 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ISL9R3060G2_NL 数据手册

 浏览型号ISL9R3060G2_NL的Datasheet PDF文件第2页浏览型号ISL9R3060G2_NL的Datasheet PDF文件第3页浏览型号ISL9R3060G2_NL的Datasheet PDF文件第4页浏览型号ISL9R3060G2_NL的Datasheet PDF文件第5页浏览型号ISL9R3060G2_NL的Datasheet PDF文件第6页 
May 2004  
ISL9R3060G2, ISL9R3060P2  
30A, 600V Stealth™ Diode  
General Description  
Features  
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 1.2  
b a  
The ISL9R3060G2 and ISL9R3060P2 are Stealth™  
diodes optimized for low loss performance in high  
frequency hard switched applications. The Stealth™ family  
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 35ns  
rr  
o
Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 C  
exhibits low reverse recovery current (I  
exceptionally soft recovery under typical operating  
conditions.  
) and  
RRM  
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
Avalanche Energy Rated  
This device is intended for use as a free wheeling or boost  
diode in power supplies and other power switching  
Applications  
applications. The low I  
and short t phase reduce loss  
RRM  
a
Switch Mode Power Supplies  
Hard Switched PFC Boost Diode  
UPS Free Wheeling Diode  
Motor Drive FWD  
in switching transistors. The soft recovery minimizes  
ringing, expanding the range of conditions under which the  
diode may be operated without the use of additional  
snubber circuitry. Consider using the Stealth™ diode with  
an SMPS IGBT to provide the most efficient and highest  
power density design at lower cost.  
Formerly developmental type TA49411.  
SMPS FWD  
Snubber Diode  
Package  
Symbol  
CATHODE  
(FLANGE)  
JEDEC STYLE 2 LEAD TO-247  
JEDEC TO-220AC  
ANODE  
K
CATHODE  
CATHODE  
(BOTTOM SIDE  
METAL)  
A
CATHODE  
ANODE  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
600  
Units  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
V
600  
V
V
600  
V
R
I
Average Rectified Forward Current  
30  
A
F(AV)  
I
Repetitive Peak Surge Current (20kHz Square Wave)  
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
Power Dissipation  
70  
A
FRM  
I
325  
A
FSM  
P
200  
W
mJ  
°C  
D
E
Avalanche Energy (1A, 40mH)  
20  
AVL  
T , T  
Operating and Storage Temperature Range  
-55 to 175  
J
STG  
T
Maximum Temperature for Soldering  
L
T
Leads at 0.063in (1.6mm) from Case for 10s  
Package Body for 10s, See Techbrief TB334  
300  
260  
°C  
°C  
PKG  
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
©2004 Fairchild Semiconductor Corporation  
ISL9R3060G2, ISL9R3060P2 Rev. C3  

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