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ISL9R1560PF2 PDF预览

ISL9R1560PF2

更新时间: 2024-11-26 11:11:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网功效二极管
页数 文件大小 规格书
7页 165K
描述
15 A、600 V STEALTH™ 二极管

ISL9R1560PF2 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:TO-220F, 2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:1 week风险等级:1.84
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.04 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ISL9R1560PF2 数据手册

 浏览型号ISL9R1560PF2的Datasheet PDF文件第2页浏览型号ISL9R1560PF2的Datasheet PDF文件第3页浏览型号ISL9R1560PF2的Datasheet PDF文件第4页浏览型号ISL9R1560PF2的Datasheet PDF文件第5页浏览型号ISL9R1560PF2的Datasheet PDF文件第6页浏览型号ISL9R1560PF2的Datasheet PDF文件第7页 
ISL9R1560PF2  
15 A, 600 V, STEALTH Diode  
Description  
The ISL9R1560PF2 is a STEALTH diode optimized for low loss  
performance in high frequency hard switched applications. The  
STEALTH family exhibits low reverse recovery current (I ) and  
RR  
exceptionally soft recovery under typical operating conditions. This  
device is intended for use as a free wheeling or boost diode in power  
www.onsemi.com  
supplies and other power switching applications. The low I and  
RR  
short ta phase reduce loss in switching transistors. The soft recovery  
minimizes ringing, expanding the range of conditions under which the  
diode may be operated without the use of additional snubber circuitry.  
Consider using the STEALTH diode with an SMPS IGBT to provide  
the most efficient and highest power density design at lower cost.  
Features  
TO−220F  
2 LEAD  
CASE 221AS  
Stealth Recovery, t = 29.4 ns (@ I = 15 A)  
rr  
F
Max. Forward Voltage, V = 2.2 V (@ T = 25°C)  
F
C
600 V Reverse Voltage and High Reliability  
Avalanche Energy Rated  
These Devices are Pb−Free and are RoHS Compliant  
MARKING DIAGRAM  
Applications  
R1560  
PF2  
Hard Switched PFC Boost Diode  
UPS Free Wheeling Diode  
Motor Drive FWD  
SMPS FWD  
Snubber Diode  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
600  
600  
600  
15  
Unit  
V
R1560PF2 = Specific Device Marking  
Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RRM  
RWM  
V
V
V
R
V
Average Rectified Forward Current  
I
A
F(AV)  
(T = 25°C)  
C
1. Cathode  
2. Anode  
Repetitive Peak Surge Current  
(20 kHz Square Wave)  
I
30  
A
A
FRM  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Nonrepetitive Peak Surge Current  
(Halfwave 1 Phase 60 Hz)  
I
200  
FSM  
Power Dissipation  
P
37  
20  
W
mJ  
°C  
D
Avalanche Energy (1 A, 40 mH)  
E
AVL  
Operating and Storage Temperature  
Range  
T , T  
−55 to  
175  
J
STG  
Maximum Temperature for Soldering  
Leads at 0.063 in (1.6 mm) from Case  
for 10s  
T
L
300  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
December, 2017 − Rev. 2  
ISL9R1560PF2/D  

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