Datasheet > ISL9N316AS3ST

ISL9N316AS3ST

更新时间： 2024-09-19 23:59:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
11页	140K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 48A I(D) \| TO-263AB

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ISL9N316AS3ST 数据手册

January 2002

ISL9N316AP3/ISL9N316AS3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description

Features

This device employs a new advanced trench MOSFET

technology and features low gate charge while maintaining

low on-resistance.

• Fast switching

• r

= 0.014Ω (Typ), V = 10V

DS(ON)

= 0.020Ω (Typ), V = 4.5V

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

• Q (Typ) = 13nC, V = 5V

• Q (Typ) = 4.5nC

Applications

• DC/DC converters

• C

(Typ) = 1450pF

ISS

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

TO-263AB

TO-220AB

MOSFET Maximum Ratings ^T= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

Drain Current

Continuous (T = 25 C, V = 10V)

Continuous (T = 100 C, V = 4.5V)

C GS

Continuous (T = 25 C, V = 10V, R = 43 C/W)

θJA

Pulsed

Figure 4

Power dissipation

Derate above 25 C

0.43

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-263

2.31

C/W

θJC

θJA

Thermal Resistance Junction to Ambient TO-220, TO-263

C/W

Thermal Resistance Junction to Ambient TO-263, 1in copper pad area

C/W

Package Marking and Ordering Information

Device Marking

N316AS

Device

ISL9N316AS3ST

ISL9N316AP3

Package

TO-263AB

TO-220AB

Reel Size

330mm

Tube

Tape Width

24mm

N/A

Quantity

800 units

N316AP

Rev. B, January 2002

12 3 4 5 6 7...11

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