ISL9N322AP3_NL

更新时间： 2024-11-25 13:08:55

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飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关局域网
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ISL9N322AP3_NL 数据手册

January 2002

ISL9N322AP3/ISL9N322AS3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description

Features

This device employs a new advanced trench MOSFET

technology and features low gate charge while maintaining

low on-resistance.

• Fast switching

• r

= 0.018Ω (Typ), V = 10V

DS(ON)

= 0.028Ω (Typ), V = 4.5V

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

• Q (Typ) = 9nC, V = 5V

• Q (Typ) = 3nC

Applications

• DC/DC converters

• C

(Typ) = 970pF

ISS

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

TO-263AB

TO-220AB

MOSFET Maximum Ratings ^T= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

Drain Current

Continuous (T = 25 C, V = 10V)

Continuous (T = 100 C, V = 4.5V)

C GS

Continuous (T = 25 C, V = 10V, R = 43 C/W)

θJA

Pulsed

Figure 4

Power dissipation

Derate above 25 C

0.33

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-263

C/W

θJC

θJA

Thermal Resistance Junction to Ambient TO-220, TO-263

Thermal Resistance Junction to Ambient TO-263, 1in copper pad area

Package Marking and Ordering Information

Device Marking

N322AS

Device

ISL9N322AS3ST

ISL9N322AP3

Package

TO-263AB

TO-220AB

Reel Size

330mm

Tube

Tape Width

24mm

N/A

Quantity

800 units

50 units

N322AP

Rev. B, January 2002

12 3 4 5 6 7...11

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