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ISL9N327AD3ST PDF预览

ISL9N327AD3ST

更新时间: 2024-11-24 22:22:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
11页 185K
描述
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N327AD3ST 数据手册

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February 2002  
ISL9N327AD3ST  
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs  
General Description  
Features  
This device employs a new advanced trench MOSFET  
technology and features low gate charge while maintaining  
low on-resistance.  
Fast switching  
r
r
= 0.023(Typ), V = 10V  
GS  
DS(ON)  
DS(ON)  
= 0.033(Typ), V = 4.5V  
Optimized for switching applications, this device improves  
the overall efficiency of DC/DC converters and allows  
operation to higher switching frequencies.  
GS  
Q (Typ) = 8.7nC, V = 5V  
g
GS  
Q
(Typ) =3.2nC  
(Typ) =910pF  
gd  
Applications  
DC/DC converters  
C
ISS  
DRAIN (FLANGE)  
D
GATE  
G
SOURCE  
S
TO-252  
MOSFET Maximum Ratings T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Ratings  
30  
Units  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
V
V
DSS  
GS  
±20  
Drain Current  
o
20  
17  
A
A
A
Continuous (T = 25 C, V = 10V)  
C
GS  
o
I
Continuous (T = 100 C, V = 4.5V)  
C GS  
D
o
o
Continuous (T = 25 C, V = 10V, R = 52 C/W)  
7
C
GS  
θJA  
Pulsed  
Figure 4  
Power dissipation  
Derate above  
50  
0.33  
W
W/ C  
P
o
D
o
T , T  
Operating and Storage Temperature  
-55 to 175  
C
J
STG  
Thermal Characteristics  
o
o
o
R
R
R
Thermal Resistance Junction to Case , TO-252  
Thermal Resistance Junction to Ambient , TO-252  
3
C/W  
C/W  
C/W  
θJC  
θJA  
θJA  
100  
52  
2
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
16mm  
Quantity  
N327AD  
ISL9N327AD3ST  
TO-252AA  
330mm  
2500 units  
©2002 Fairchild Semiconductor Corporation  
Rev. B, February 2002  

ISL9N327AD3ST 替代型号

型号 品牌 替代类型 描述 数据表
FDD6612A FAIRCHILD

类似代替

30V N-Channel PowerTrench MOSFET
ISL9N322AD3ST FAIRCHILD

类似代替

N-Channel Logic Level UltraFET Trench MOSFET

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