Datasheet > ISL9N315AD3

ISL9N315AD3

更新时间： 2024-11-24 22:17:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	233K
描述
N-Channel Logic Level PWM Optimized UltraFET?? Trench Power MOSFETs

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ISL9N315AD3 数据手册

February 2003

ISL9N315AD3 / ISL9N315AD3ST

N-Channel Logic Level PWM Optimized UltraFET^®Trench Power MOSFETs

General Description

Features

This device employs a new advanced trench MOSFET

technology and features low gate charge while maintaining

low on-resistance.

•

Fast switching

_DS(ON)= 0.012Ω (Typ), V_GS= 10V

_DS(ON)= 0.022Ω (Typ), V_GS= 4.5V

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

Q_g(Typ) = 18nC, V_GS= 5V

_gd(Typ) = 3.4nC

Formerly developmental type 83337

_ISS(Typ) = 900pF

Applications

•

DC/DC converters

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

DRAIN

(FLANGE)

GATE

SOURCE

TO-252

TO-251

MOSFET Maximum Ratings T_A=25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Drain to Source Voltage

Ratings

Units

Gate to Source Voltage

±20

Drain Current

Continuous (T_C= 25^oC, V_GS= 10V)

Continuous (T_C= 100^oC, V_GS= 4.5V)

Continuous (T_C= 25^oC, V_GS= 10V, R_θJA= 52^oC/W)

Pulsed

I_D

Figure 4

Power dissipation

Derate above 25^oC

0.37

P_D

W/^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

^oC

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-251, TO-252

Thermal Resistance Junction to Ambient TO-251, TO-252

Thermal Resistance Junction to Ambient TO-252, 1in²copper pad area

2.73

^oC/W

100

Package Marking and Ordering Information

Device Marking

N315AD

Device

Package

TO-252AA

TO-251AA

Reel Size

330mm

Tube

Tape Width

16mm

Quantity

ISL9N315AD3ST

ISL9N315AD3

2500 units

75 units

N315AD

N/A

ISL9N315AD3/ISL9N315AD3ST Rev. A1

12 3 4 5 6 7...11

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