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IS65C256AL-25UA3 PDF预览

IS65C256AL-25UA3

更新时间: 2024-11-30 04:22:59
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
12页 92K
描述
32K x 8 LOW POWER CMOS STATIC RAM

IS65C256AL-25UA3 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.330 INCH, PLASTIC, SOP-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.55
Is Samacsys:N最长访问时间:25 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:18.11 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.45
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:2.84 mm
最大待机电流:0.00005 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.035 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8.405 mm
Base Number Matches:1

IS65C256AL-25UA3 数据手册

 浏览型号IS65C256AL-25UA3的Datasheet PDF文件第2页浏览型号IS65C256AL-25UA3的Datasheet PDF文件第3页浏览型号IS65C256AL-25UA3的Datasheet PDF文件第4页浏览型号IS65C256AL-25UA3的Datasheet PDF文件第5页浏览型号IS65C256AL-25UA3的Datasheet PDF文件第6页浏览型号IS65C256AL-25UA3的Datasheet PDF文件第7页 
®
IS65C256AL  
IS62C256AL  
ISSI  
32K x 8 LOW POWER CMOS STATIC RAM  
MARCH 2006  
FEATURES  
DESCRIPTION  
The ISSI IS62C256AL/IS65C256AL is a low power,  
32,768 word by 8-bit CMOS static RAM. It is fabricated  
using ISSI's high-performance, low power CMOS tech-  
nology.  
• Access time: 25 ns, 45 ns  
• Low active power: 200 mW (typical)  
• Low standby power  
— 150 µW (typical) CMOS standby  
— 15 mW (typical) operating  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 150 µW (typical) at CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using an active  
LOW Chip Select (CE) input and an active LOW Output  
Enable (OE) input. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 5V power supply  
• Lead-free available  
• Industrial and Automotive temperatures avail-  
able  
The IS62C256AL/IS65C256AL is pin compatible with  
other 32Kx8 SRAMs in plastic SOP or TSOP (Type I)  
package.  
FUNCTIONAL BLOCK DIAGRAM  
32K X 8  
MEMORY ARRAY  
A0-A14  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. A  
03/17/06  

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