Datasheet > IS65WV102416EBLL-55BLA3

IS65WV102416EBLL-55BLA3

更新时间： 2024-11-30 20:49:07

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器内存集成电路
页数	文件大小	规格书
15页	1057K
描述
Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-48

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS65WV102416EBLL-55BLA3 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	VFBGA,	Reach Compliance Code：	compliant
Factory Lead Time：	10 weeks	风险等级：	5.72
最长访问时间：	55 ns	JESD-30 代码：	R-PBGA-B48
长度：	8 mm	内存密度：	16777216 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	16
功能数量：	1	端子数量：	48
字数：	1048576 words	字数代码：	1000000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-40 °C	组织：	1MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	VFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
座面最大高度：	1 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.2 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	AUTOMOTIVE	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	6 mm
Base Number Matches：	1

IS65WV102416EBLL-55BLA3 数据手册

浏览型号IS65WV102416EBLL-55BLA3的Datasheet PDF文件第2页

浏览型号IS65WV102416EBLL-55BLA3的Datasheet PDF文件第3页

浏览型号IS65WV102416EBLL-55BLA3的Datasheet PDF文件第4页

浏览型号IS65WV102416EBLL-55BLA3的Datasheet PDF文件第5页

浏览型号IS65WV102416EBLL-55BLA3的Datasheet PDF文件第6页

浏览型号IS65WV102416EBLL-55BLA3的Datasheet PDF文件第7页

IS62/65WV102416EALL

IS62/65WV102416EBLL

FEBRUARY 2016

1Mx16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

KEY FEATURES

DESCRIPTION



High-speed access time: 45ns, 55ns

CMOS low power operation

– Operating (typical):

The

IS62WV102416EALL/BLL and

IS65WV102416EALL/BLL are Low Power, 16M bit

static RAMs organized as 1024K words by 16bits. It is

10.8mW (1.8V), 18mW (3.0V)

fabricated using

's high-performance CMOS

– CMOS Standby (typical):

technology. This highly reliable process coupled with

innovative circuit design techniques, yields high-

performance and low power consumption devices.

When

(deselected) or when

and are HIGH, the device assumes a standby

48 µW (1.8V), 90 µW (3.0V)



TTL compatible interface levels

Single power supply

–1.65V—1.98V Vdd (62/65WV102416EALL)

– 2.2V--3.6V Vdd (62/65WV102416EBLL)

Data control for upper and lower bytes

Industrial and Automotive temperature support

is HIGH (deselected) or when CS2 is low

is low , CS2 is high and both



mode at which the power dissipation can be reduced

down with CMOS input levels.

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs. The active LOW

Write Enable

the memory. A data byte allows Upper Byte

Lower Byte ( access.

The IS62WV102416EALL/BLL and

controls both writing and reading of

and

IS65WV102416EALL/BLL are packaged in the JEDEC

standard 48-pin BGA (6mm x 8mm).

BLOCK DIAGRAM

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A1

2/22/2016

12 3 4 5 6 7...15

中文翻译

下载PDF

与IS65WV102416EBLL-55BLA3相关器件

型号	品牌	获取价格	描述	数据表
IS65WV102416FALL-55BLA3	ISSI	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, MINIBGA-48
IS65WV102416FALL-55CTLA3	ISSI	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PDSO48, TSOP1-48
IS65WV10248BLL	ISSI	获取价格	Data control for upper and lower bytes
IS65WV10248DALL	ISSI	获取价格	TTL compatible interface levels
IS65WV10248EALL	ISSI	获取价格	Data control for upper and lower bytes
IS65WV10248EBLL-45CTLA3	ISSI	获取价格	Standard SRAM, 1MX8, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS65WV12816ALL	ISSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816ALL-70B2A2	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70B2A3	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70BA	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

与IS65WV102416EBLL-55BLA3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

IS65WV102416EBLL-55BLA3

IS65WV102416EBLL-55BLA3 技术参数

IS65WV102416EBLL-55BLA3 数据手册

与IS65WV102416EBLL-55BLA3相关器件

与IS65WV102416EBLL-55BLA3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS65WV102416EBLL-55BLA3

IS65WV102416EBLL-55BLA3 技术参数

IS65WV102416EBLL-55BLA3 数据手册

与IS65WV102416EBLL-55BLA3相关器件

与IS65WV102416EBLL-55BLA3相关文章

您还可以找

您在本页遇到什么问题？