Datasheet > IS65WV10248EALL

IS65WV10248EALL

更新时间： 2024-12-01 01:23:31

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
15页	758K
描述
Data control for upper and lower bytes

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中文翻译

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数据手册

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IS65WV10248EALL 数据手册

IS62WV10248EALL/BLL

IS65WV10248EALL/BLL

NOVEMBER 2014

1Mx8 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

KEY FEATURES

DESCRIPTION

The ISSI IS62WV10248EALL/ IS62WV10248EBLL are

high-speed, 8M bit static RAMs organized as 1M words

by 8 bits. It is fabricated using ISSI's high-performance

CMOS technology. This highly reliable process

coupled with innovative circuit design techniques,

yields high-performance and low power consumption

devices.



High-speed access time: 45ns, 55ns

CMOS low power operation

– 36 mW (typical) operating

– 12 µW (typical) CMOS standby

TTL compatible interface levels

Single power supply



–1.65V-2.2V V

(

)

62/65WV10248EALL

When

is HIGH (deselected) or when CS2 is low

– 2.2V-3.6V V

(

EBLL)

62/65WV10248

(deselected), the device assumes a standby mode at

which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs. The active LOW



Data control for upper and lower bytes

Automotive temperature (-40^oC to +125^oC)

Lead-free available

Write Enable (

the memory.

) controls both writing and reading of

The IS62WV10248EALL and IS62WV10248EBLL are

packaged in the JEDEC standard 48-pin mini BGA

(6mm x 8mm) and 44-Pin TSOP (TYPE II).

BLOCK DIAGRAM

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. B

10/21/2014

12 3 4 5 6 7...15

中文翻译

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与IS65WV10248EALL相关器件

型号	品牌	获取价格	描述	数据表
IS65WV10248EBLL-45CTLA3	ISSI	获取价格	Standard SRAM, 1MX8, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS65WV12816ALL	ISSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816ALL-70B2A2	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70B2A3	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70BA	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70BA1	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70TA2	ISSI	获取价格	128KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44
IS65WV12816ALL-70TA3	ISSI	获取价格	128KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44
IS65WV12816BLL	ISSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816BLL-55B2A2	ISSI	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

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