5秒后页面跳转
IS65WV12816BLL-55BA3 PDF预览

IS65WV12816BLL-55BA3

更新时间: 2024-01-02 00:15:26
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
17页 383K
描述
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

IS65WV12816BLL-55BA3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.2
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:8 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3.3 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.2 mm最大待机电流:0.000065 A
最小待机电流:1.2 V子类别:SRAMs
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

IS65WV12816BLL-55BA3 数据手册

 浏览型号IS65WV12816BLL-55BA3的Datasheet PDF文件第2页浏览型号IS65WV12816BLL-55BA3的Datasheet PDF文件第3页浏览型号IS65WV12816BLL-55BA3的Datasheet PDF文件第4页浏览型号IS65WV12816BLL-55BA3的Datasheet PDF文件第5页浏览型号IS65WV12816BLL-55BA3的Datasheet PDF文件第6页浏览型号IS65WV12816BLL-55BA3的Datasheet PDF文件第7页 
IS65WV12816ALL  
IS65WV12816BLL  
MARCH 2013  
128K x 16 LOW VOLTAGE,  
ULTRA LOW POWER CMOS STATIC RAM  
DESCRIPTION  
FEATURES  
The ISSI IS65WV12816ALL/ IS65WV12816BLL are  
high-speed, 2M bit static RAMs organized as 128K words  
by 16 bits. It is fabricated using ISSI's high-performance  
CMOS technology. This highly reliable process coupled  
with innovative circuit design techniques, yields high-  
performance and low power consumption devices.  
• High-speed access time: 55ns, 70ns  
• CMOS low power operation:  
36 mW (typical) operating  
9 µW (typical) CMOS standby  
• TTL compatible interface levels  
• Single power supply:  
When CS1 is HIGH (deselected) or when CS2 is LOW  
(deselected) or when CS1 is LOW, CS2 is HIGH and both  
LBandUBareHIGH, thedeviceassumesastandbymode  
at which the power dissipation can be reduced down with  
CMOS input levels.  
1.65V to 2.2V Vdd (65WV12816ALL)  
2.5V to 3.6V Vdd (65WV12816BLL)  
• Fully static operation: no clock or refresh  
Easymemory expansion is provided byusing Chip Enable  
and Output Enable inputs. The active LOW Write Enable  
(WE) controls both writing and reading of the memory. A  
data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
required  
• Three state outputs  
• Data control for upper and lower bytes  
• 2CS Option Available  
Temperature Offerings:  
The IS65WV12816ALL and IS65WV12816BLL are  
packged in the JEDEC standard 48-pin mini BGA (6mm  
x 8mm) and 44-Pin TSOP (TYPE II).  
Option A: 0 to 70oC  
Option A1: 40 to +85oC  
Option A2: 40 to +105oC  
Option A3: 40 to +125oC  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
128K x 16  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O8-I/O15  
Upper Byte  
CS2  
CS1  
OE  
WE  
UB  
CONTROL  
CIRCUIT  
LB  
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. C  
03/6/13  

与IS65WV12816BLL-55BA3相关器件

型号 品牌 描述 获取价格 数据表
IS65WV12816BLL-55TA ISSI 128KX16 STANDARD SRAM, 55ns, PDSO44, PLASTIC, TSOP2-44

获取价格

IS65WV12816BLL-55TA1 ISSI 128KX16 STANDARD SRAM, 55ns, PDSO44, PLASTIC, TSOP2-44

获取价格

IS65WV12816BLL-55TA2 ISSI 128KX16 STANDARD SRAM, 55ns, PDSO44, PLASTIC, TSOP2-44

获取价格

IS65WV12816BLL-55TA3 ISSI 128KX16 STANDARD SRAM, 55ns, PDSO44, PLASTIC, TSOP2-44

获取价格

IS65WV12816BLL-55TLA3 ISSI Standard SRAM, 128KX16, 55ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44

获取价格

IS65WV12816BLL-55TLA3-TR ISSI Standard SRAM, 128KX16, 55ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

获取价格