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IS65WV12816ALL-70B2A3 PDF预览

IS65WV12816ALL-70B2A3

更新时间: 2024-11-30 14:34:03
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
19页 103K
描述
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

IS65WV12816ALL-70B2A3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.77
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:8 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8/2 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.2 mm最小待机电流:1.2 V
子类别:SRAMs最大压摆率:0.02 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

IS65WV12816ALL-70B2A3 数据手册

 浏览型号IS65WV12816ALL-70B2A3的Datasheet PDF文件第2页浏览型号IS65WV12816ALL-70B2A3的Datasheet PDF文件第3页浏览型号IS65WV12816ALL-70B2A3的Datasheet PDF文件第4页浏览型号IS65WV12816ALL-70B2A3的Datasheet PDF文件第5页浏览型号IS65WV12816ALL-70B2A3的Datasheet PDF文件第6页浏览型号IS65WV12816ALL-70B2A3的Datasheet PDF文件第7页 
®
IS65WV12816ALL  
IS65WV12816BLL  
ISSI  
PRELIMINARYINFORMATION  
FEBRUARY2003  
128K x 16 LOW VOLTAGE,  
ULTRA LOW POWER CMOS STATIC RAM  
FEATURES  
Option A2: –40 to +105oC  
Option A3: –40 to +125oC  
• High-speed access time: 55ns, 70ns  
• CMOS low power operation:  
36 mW (typical) operating  
DESCRIPTION  
9 µW (typical) CMOS standby  
• TTL compatible interface levels  
• Single power supply:  
TheISSIIS65WV12816ALL/IS65WV12816BLLare high-  
speed, 2M bit static RAMs organized as 128K words by 16  
bits. It is fabricated using ISSI's high-performance CMOS  
technology. This highly reliable process coupled with  
innovative circuit design techniques, yields high-  
performance and low power consumption devices.  
1.65V to 2.2V VDD (65WV12816ALL)  
2.5V to 3.6V VDD (65WV12816BLL)  
When CS1 is HIGH (deselected) or when CS2 is LOW  
(deselected) or when CS1 is LOW, CS2 is HIGH and both  
LBandUBareHIGH, thedeviceassumesastandbymode  
at which the power dissipation can be reduced down with  
CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs. The active LOW Write Enable  
(WE) controls both writing and reading of the memory. A  
data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• Data control for upper and lower bytes  
• 2CS Option Available  
• Temperature Offerings:  
Option A: 0 to 70oC  
TheIS65WV12816ALLandIS65WV12816BLLarepackged  
intheJEDECstandard48-pinminiBGA(6mmx8mm)and  
44-Pin TSOP (TYPE II).  
Option A1: –40 to +85oC  
FUNCTIONAL BLOCK DIAGRAM  
128K x 16  
MEMORY ARRAY  
A0-A16  
DECODER  
V
DD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O8-I/O15  
Upper Byte  
CS2  
CS1  
OE  
WE  
UB  
CONTROL  
CIRCUIT  
LB  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. 00D  
1
02/05/03  

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