Datasheet > IS65WV12816EBLL

IS65WV12816EBLL

更新时间： 2024-01-09 15:41:46

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
17页	1178K
描述
Three state outputs

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中文翻译

获取价格

数据手册

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IS65WV12816EBLL 数据手册

IS62/65WV12816EALL

IS62/65WV12816EBLL

PRELIMINARY INFORMATION

DECEMBER 2014

128Kx16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

KEY FEATURES

DESCRIPTION

ISSI

The

IS62/65WV12816EALL/EBLL are high-speed,



High-speed access time: 45ns, 55ns

2M bit static RAMs organized as 128K words by 16 bits.

ISSI



CMOS low power operation

– 36 mW (typical) operating

It is fabricated using

's high-performance CMOS

– 9 µW (typical) CMOS standby

TTL compatible interface levels

Single power supply

technology. This highly reliable process coupled with

innovative circuit design techniques, yields high-

performance and low power consumption devices.



–1.65V-2.2V VDD (IS62/65WV12816EALL)

– 2.2V-3.6V VDD (IS62/65WV12816EBLL)

Three state outputs

When

LOW (deselected) or when

HIGH and both and

assumes a standby mode at which the power

dissipation can be reduced down with CMOS input

levels.

is HIGH (deselected) or when CS2 is

is LOW, CS2 is

are HIGH, the device



Industrial and Automotive temperature support

2CS Option Available

Lead-free available

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs. The active LOW

Write Enable

of the memory. A data byte allows Upper Byte

and Lower Byte ( access.

controls both writing and reading

The IS62/65WV12816EALL/EBLL are packaged in the

JEDEC standard 48-pin mini BGA (6mm x 8mm) and

44-Pin TSOP (TYPE II).

BLOCK DIAGRAM

128K x 16

MEMORY

ARRAY

DECODER

A0 – A16

VDD

GND

I/O0 – I/O7

Lower Byte

I/O

DATA

COLUMN I/O

I/O8 – I/O15

CIRCUIT

Upper Byte

CS2

CS1#

OE#

WE#

UB#

LB#

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. 0B

12/9/2014

12 3 4 5 6 7...17

中文翻译

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与IS65WV12816EBLL相关器件

型号	品牌	获取价格	描述	数据表
IS65WV1288BLL-55HLA1	ISSI	获取价格	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, LEAD FREE, PLASTIC, STSOP1-32
IS65WV1288BLL-55HLA3	ISSI	获取价格	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, LEAD FREE, PLASTIC, TSOP1-32
IS65WV1288BLL-55TLA1	ISSI	获取价格	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, LEAD FREE, PLASTIC, TSOP1-32
IS65WV1288DALL/DBLL	ISSI	获取价格	128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV1288DBLL-45HLA3-TR	ISSI	获取价格	Standard SRAM, 128KX8, 45ns, CMOS, PDSO32,
IS65WV1288DBLL-45QLA3	ISSI	获取价格	Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, SOP-32
IS65WV1288DBLL-45QLA3-TR	ISSI	获取价格	Standard SRAM, 128KX8, 45ns, CMOS, PDSO32,
IS65WV1288DBLL-45TLA3	ISSI	获取价格	IC SRAM 1M PARALLEL 32TSOP I
IS65WV1288DBLL-45TLA3-TR	ISSI	获取价格	IC SRAM 1M PARALLEL 32TSOP I
IS65WV20488EALL	ISSI	获取价格	TTL compatible interface levels

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