Datasheet > IS65WV25616ALL

IS65WV25616ALL

更新时间： 2024-12-01 03:04:51

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
13页	99K
描述
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

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中文翻译

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IS65WV25616ALL 数据手册

IS65WV25616ALL

IS65WV25616BLL

ISSI

256K x 16 LOW VOLTAGE, ULTRA

LOW POWER CMOS STATIC SRAM

PRELIMINARYINFORMATION

JUNE2006

FEATURES

DESCRIPTION

TheISSIIS65WV25616ALL/IS65WV25616BLL are high-

speed,lowpower,4MbitSRAMsorganizedas256Kwords

by 16 bits. It is fabricated using ISSI's high-performance

CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

• High-speed access time: 55ns, 70ns

• CMOS low power operation

36 mW (typical) operating

9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

WhenCS1isHIGH(deselected)orwhenCS1isLOW,and

both LB and UB are HIGH, the device assumes a standby

modeatwhichthepowerdissipationcanbereduceddown

with CMOS input levels.

1.65V--2.2V V^DD(65WV25616ALL)

2.5V--3.6V V^DD(65WV25616BLL)

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

• Three state outputs

• Data control for upper and lower bytes

•

TEMPERATURE OFFERINGS:

Option A1: -40°C to +85°C

Option A2: -40°C to +105°C

Option A3: -40°C to +125°C

Lead-freeavailable

TheIS65WV25616BALL/65WV25616BLL arepackagedin

the JEDEC standard 44-Pin TSOP (TYPE II).

•

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS1

CONTROL

CIRCUIT

25616LL_BLK.eps

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. 00B

06/20/06

12 3 4 5 6 7...13

中文翻译

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与IS65WV25616ALL相关器件

型号	品牌	获取价格	描述	数据表
IS65WV25616ALL-70CTLA1	ISSI	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, TSOP2-44
IS65WV25616ALL-70CTLA3	ISSI	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, TSOP2-44
IS65WV25616ALL-70TA1	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616ALL-70TA2	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616ALL-70TA3	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL-55BLA1	ISSI	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48
IS65WV25616BLL-55CTLA1	ISSI	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 6 X 8 MM, LEAD FREE, PLASTIC, TSOP2-44
IS65WV25616BLL-55TA1	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL-55TLA1	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

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