Datasheet > IS65WV51216EFALL-55BLA3

IS65WV51216EFALL-55BLA3

更新时间： 2024-02-28 14:18:45

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器内存集成电路
页数	文件大小	规格书
20页	742K
描述
Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48

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技术参数
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IS65WV51216EFALL-55BLA3 技术参数

生命周期：	Active	包装说明：	VFBGA,
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.41
风险等级：	5.73	最长访问时间：	55 ns
JESD-30 代码：	R-PBGA-B48	长度：	8 mm
内存密度：	8388608 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	16	功能数量：	1
端子数量：	48	字数：	524288 words
字数代码：	512000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-40 °C
组织：	512KX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	VFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	并行/串行：	PARALLEL
座面最大高度：	1 mm	最大供电电压 (Vsup)：	2.2 V
最小供电电压 (Vsup)：	1.65 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	AUTOMOTIVE	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
宽度：	6 mm	Base Number Matches：	1

IS65WV51216EFALL-55BLA3 数据手册

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IS62WV51216EFALL/BLL

IS65WV51216EFALL/BLL

JANUARY 2017

512Kx16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM with ECC

KEY FEATURES

DESCRIPTION

The ISSI IS62/65WV51216EFALL/BLL are high-speed, low

power, 8M bit static RAMs organized as 512K words by 16

bits. It is fabricated using ISSI's high-performance CMOS

technology and implemented ECC function to improve

reliability.



High-speed access time: 45ns, 55ns



CMOS low power operation

– Operating Current: 36mA (max.)

– CMOS standby Current: 5.8uA (typ.)

TTL compatible interface levels

Single power supply



This highly reliable process coupled with innovative circuit

design techniques including ECC (SEC-DEC: Single Error

Correcting-Double Error Detecting),yields high-performance

and low power consumption devices. When CS1# is HIGH

(deselected) or when CS2 is LOW (deselected), or when

CS1# is LOW, CS2 is HIGH and both LB# and UB# are

HIGH, the device assumes a standby mode at which the

power dissipation can be reduced down with CMOS input

levels.

–1.65V-2.2V VDD (IS62/65WV51216EFALL)

– 2.2V-3.6V VDD (IS62/65WV51216EFBLL)

Optional ERR1/ERR2 pin:



ERR1: indicates 1-bit error detection and

correction.

ERR2: indicates 2-bit error detection

Three state outputs

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE#) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB#) and Lower Byte (LB#)

access.



Commercial, Industrial and Automotive

temperature support

Lead-free available



The IS62/65WV51216EFALL/BLL are packaged in the

JEDEC standard 48-pin mini BGA (6mm x 8mm), and 44-pin

TSOP (TYPE II)

FUNCTIONAL BLOCK DIAGRAM

Memory

Upper IO

Array

Lower IO ECC

Array

512Kx8 512Kx4

ECC

Array

512Kx4

DECODER

A0 – A18

512Kx8

VDD

VSS

ERR1

ERR2

I/O

DATA

CIRCUIT

I/O0 – I/O7

ECC

COLUMN I/O

Column I/O

I/O8 – I/O15

CS1#

CS2

OE#

WE#

UB#

LB#

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A

01/05/2017

12 3 4 5 6 7...20

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与IS65WV51216EFALL-55BLA3相关器件

型号	品牌	获取价格	描述	数据表
IS65WV51216EFBLL-55B3A3	ISSI	获取价格	SRAM,
IS65WV51216EFBLL-55BA3	ISSI	获取价格	SRAM,
IS65WV51216EFBLL-55CTLA3	ISSI	获取价格	SRAM,
IS65WV51216GALL-55CTLA3	ISSI	获取价格	Standard SRAM,
IS65WV51216HBLL-55B2A3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
IS65WV51216HBLL-55BA3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
IS65WV5128DALL	ISSI	获取价格	512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV5128EHBLL-55BLA3	ISSI	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, MINIBGA-48/36
IS65WV6416DALL	ISSI	获取价格	High-speed access time: 35ns, 45ns, 55ns
IS65WV6416DALL/DBLL	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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