生命周期: | Active | 包装说明: | TSOP1, |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
最长访问时间: | 55 ns | JESD-30 代码: | R-PDSO-G48 |
长度: | 18.4 mm | 内存密度: | 8388608 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 组织: | 512KX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP1 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
并行/串行: | PARALLEL | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 2.2 V | 最小供电电压 (Vsup): | 1.65 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 宽度: | 12 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS65WV51216HBLL-55B2A3 | ISSI |
获取价格 |
Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48 | |
IS65WV51216HBLL-55BA3 | ISSI |
获取价格 |
Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48 | |
IS65WV5128DALL | ISSI |
获取价格 |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM | |
IS65WV5128EHBLL-55BLA3 | ISSI |
获取价格 |
Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, MINIBGA-48/36 | |
IS65WV6416DALL | ISSI |
获取价格 |
High-speed access time: 35ns, 45ns, 55ns | |
IS65WV6416DALL/DBLL | ISSI |
获取价格 |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM | |
IS65WV6416DBLL | ISSI |
获取价格 |
High-speed access time: 35ns, 45ns, 55ns | |
IS65WV6416DBLL-45BLA3 | ISSI |
获取价格 |
Standard SRAM, 64KX16, 45ns, CMOS, PBGA48, 8 X 6 MM, LEAD FREE, MO-207, TFBGA-48 | |
IS65WV6416DBLL-45CTLA3 | ISSI |
获取价格 |
Standard SRAM, 64KX16, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44 | |
IS66/67WV51216DBLL | ISSI |
获取价格 |
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM |