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IS65WV6416DALL PDF预览

IS65WV6416DALL

更新时间: 2024-01-30 23:06:51
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
15页 385K
描述
High-speed access time: 35ns, 45ns, 55ns

IS65WV6416DALL 数据手册

 浏览型号IS65WV6416DALL的Datasheet PDF文件第2页浏览型号IS65WV6416DALL的Datasheet PDF文件第3页浏览型号IS65WV6416DALL的Datasheet PDF文件第4页浏览型号IS65WV6416DALL的Datasheet PDF文件第5页浏览型号IS65WV6416DALL的Datasheet PDF文件第6页浏览型号IS65WV6416DALL的Datasheet PDF文件第7页 
IS62WV6416DALL/DBLL  
IS65WV6416DALL/DBLL  
64K x 16 LOW VOLTAGE,  
ULTRA LOW POWER CMOS STATIC RAM  
OCTOBER 2009  
FEATURES  
DESCRIPTION  
TheISSIIS62/65WV6416DALLandIS62/65WV6416DBLLꢀ  
arehigh-speed,1MbitstaticRAMsorganizedas64Kwordsꢀ  
byꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀ  
CMOStechnology.Thishighlyreliableprocesscoupledꢀ  
withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ high-  
performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀ35ns,ꢀ45ns,ꢀ55ns  
•ꢀ CMOSꢀlowꢀpowerꢀoperation:  
ꢀ 15ꢀmWꢀ(typical)ꢀoperating  
ꢀ 1.5ꢀµWꢀ(typical)ꢀCMOSꢀstandby  
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels  
•ꢀ Singleꢀpowerꢀsupplyꢀꢀ  
WhenCS1isHIGH(deselected)orwhenCS2isLOW  
(deselected)ꢀorꢀwhen CS1ꢀisꢀLOW,ꢀCS2ꢀisꢀHIGHꢀandꢀbothꢀ  
LBandUBareHIGH,thedeviceassumesastandbymodeꢀ  
atꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀreducedꢀdownꢀwithꢀ  
CMOSꢀinputꢀlevels.  
ꢀ 1.65V--2.2VꢀVd d (62WV6416dALL)  
ꢀ ꢀ2.3V--3.6VꢀVd d (65WV6416dBLL)  
EasymemoryexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ  
(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀmemory.Aꢀ  
dataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀByteꢀ(LB)ꢀ  
access.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefresh  
required  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes  
•ꢀ Industrialꢀandꢀautomotiveꢀtemperatureꢀsupport  
•ꢀ 2CSꢀOptionꢀAvailable  
TheIS62/65WV6416DALLandIS62/65WV6416DBLLareꢀ  
packagedꢀinꢀtheꢀJEDECꢀstandardꢀ48-pinꢀminiꢀBGAꢀ(6mmꢀ  
xꢀ8mm)ꢀandꢀ44-PinꢀTSOPꢀ(TYPEꢀII).  
•ꢀ Lead-freeꢀavailable  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
V
DD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O8-I/O15  
Upper Byte  
CS2  
CS1  
OE  
WE  
UB  
CONTROL  
CIRCUIT  
LB  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. A  
09/29/09  

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