Datasheet > IS66/67WV51216DBLL

IS66/67WV51216DBLL

更新时间： 2024-09-24 11:58:59

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
17页	532K
描述
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM

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IS66WV51216DALL

IS66/67WV51216DBLL

JULYꢀ2011

8MbꢀLOWꢀVOLTAGE,ꢀ

ULTRAꢀLOWꢀPOWERꢀPSEUDOꢀCMOSꢀSTATICꢀRAMꢀ

ꢀꢀꢀꢀꢀꢀ

FEATURES

DESCRIPTION

• High-speed access time:

TheISSIIS66WV51216DALLandIS66/67WV51216DBLL

are high-speed, 8M bit static RAMs organized as 512K

words by 16 bits. It is fabricated using ISSI's high-

performanceCMOStechnology.Thishighlyreliableprocess

coupled with innovative circuit design techniques, yields

high-performance and low power consumption devices.

– 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)

– 55ns (IS66/67WV51216DBLL)

• CMOS low power operation

• Single power supply

– V^dd= 1.7V-1.95V (IS66WV51216dALL)

– V^dd= 2.5V-3.6V (IS66/67WV51216dBLL)

• Three state outputs

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1 is LOW, CS2 is HIGH and both

LBandUBareHIGH, thedeviceassumesastandbymode

at which the power dissipation can be reduced down with

CMOS input levels.

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

The IS66WV51216DALL and IS66/67WV51216DBLL are

packaged in the JEDEC standard 48-ball mini BGA (6mm

x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo

available for die sales.

FUNCTIONALꢀBLOCKꢀDIAGRAM

512K x 16

MEMORY ARRAY

A0-A18

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev.ꢀ A

06/28/2011

12 3 4 5 6 7...17

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与IS66/67WV51216DBLL相关器件

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IS660	ETC	获取价格	HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR
IS660_08	ISOCOM	获取价格	HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR
IS6605A	INNOVISIONSEMI	获取价格	高功率密度，高频，全集成的同步降压变换器，支持最高带载6A
IS66066	INNOVISIONSEMI	获取价格	高功率密度，高频，全集成的同步降压变换器,支持最高带载12A
IS6607A/H	INNOVISIONSEMI	获取价格	高功率密度，高频，全集成的同步降压变换器，支持最高带载20A
IS6608A	INNOVISIONSEMI	获取价格	全集成，兼容PMBus接口的多相高频同步降压变换器，单相最高带载30A，最高8相并联
IS660G	ISOCOM	获取价格	Darlington Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-6
IS660SM	ISOCOM	获取价格	暂无描述
IS660-SM	ISOCOM	获取价格	Optocoupler - Transistor Output, 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, SURFACE MOUNT, P
IS660SMT&R	ISOCOM	获取价格	Darlington Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, SURFACE MOUNT,

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