Datasheet > IS65WV25616DBLL

IS65WV25616DBLL

更新时间： 2024-01-18 15:55:29

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
17页	373K
描述
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

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中文翻译

获取价格

数据手册

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IS65WV25616DBLL 数据手册

andꢀOutputꢀEnableꢀinputs.

TheꢀactiveꢀLOWWriteꢀEnableꢀ(WE)ꢀ

performanceꢀCMOSꢀtechnology.Thisꢀhighlyꢀreliableꢀprocessꢀ

IS62WV25616DALL/DBLL, IS65WV25616DBLL

256Kꢀxꢀ16ꢀLOWꢀVOLTAGE,ꢀ

ULTRAꢀLOWꢀPOWERꢀCMOSꢀSTATICꢀSRAMꢀ

ꢀ

ꢀꢀꢀꢀꢀꢀ^ꢀ

FEBRUARYꢀ2012

FEATURES

DESCRIPTION

TheꢀISSIꢀIS62WV25616DALLꢀandꢀIS62/65WV25616DBLLꢀ

areꢀꢀhigh-speed,ꢀlowꢀpower,ꢀ4MꢀbitꢀSRAMsꢀorganizedꢀasꢀ

256Kꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-

•ꢀ High-speedꢀaccessꢀtime:ꢀ35,ꢀ45,ꢀ55ꢀnsꢀ

•ꢀ CMOSꢀlowꢀpowerꢀoperation

ꢀ 30ꢀmWꢀ(typical)ꢀoperating

coupledꢀ withꢀ innovativeꢀ circuitꢀdesignꢀ techniques,ꢀ yieldsꢀ

high-performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.

ꢀ 6ꢀµWꢀ(typical)ꢀCMOSꢀstandby

•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels

•ꢀ Singleꢀpowerꢀsupplyꢀꢀ

WhenꢀCS1ꢀisꢀHIGHꢀ(deselected)ꢀꢀorꢀwhenꢀCS2ꢀisꢀLOWꢀ

(deselcted)ꢀorꢀwhenꢀCS1ꢀisꢀLOW,ꢀCS2ꢀisꢀHIGHꢀandꢀbothꢀ

LBꢀandꢀUBꢀareꢀHIGH,ꢀtheꢀdeviceꢀassumesꢀaꢀstandbyꢀmodeꢀ

atꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀreducedꢀdownꢀwithꢀ

CMOSꢀinputꢀlevels.

ꢀ 1.65V--2.2VꢀV^dd(IS62WV25616DALL)

ꢀ 2.5V--3.6VꢀV^ddꢀ(IS62/65WV25616DBLL)

EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ

required

controlsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀmemory.ꢀAꢀdataꢀbyteꢀ

allowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀByteꢀ(LB)ꢀaccess.

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

TheꢀIS62WV25616DALLꢀandꢀIS62/65WV25616DBLLꢀareꢀ

packagedꢀinꢀtheꢀJEDECꢀstandardꢀ44-PinꢀTSOPꢀ(TYPEꢀII)ꢀ

andꢀ48-pinꢀminiꢀBGAꢀ(6mmx8mm).

•ꢀ 2ꢀCSꢀoptionꢀavailable

FUNCTIONALꢀBLOCKꢀDIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-

estꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreasonablyꢀbeꢀex-

pectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀunlessꢀIntegratedꢀSiliconꢀ

Solution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances

Integrated Silicon Solution, Inc. — www.issi.com ꢀ

Rev.ꢀ B

02/07/2012

12 3 4 5 6 7...17

中文翻译

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与IS65WV25616DBLL相关器件

型号	品牌	获取价格	描述	数据表
IS65WV25616DBLL-45CTLA1	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616DBLL-55CTLA3	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV2568DALL	ISSI	获取价格	TTL compatible interface levels
IS65WV2568DBLL	ISSI	获取价格	TTL compatible interface levels
IS65WV2568EALL	ISSI	获取价格	Three state outputs
IS65WV2568EBLL	ISSI	获取价格	Three state outputs
IS65WV51216EALL	ISSI	获取价格	TTL compatible interface levels
IS65WV51216EBLL	ISSI	获取价格	TTL compatible interface levels
IS65WV51216EBLL-45BA3	ISSI	获取价格	Standard SRAM, 512KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, MO-207, VFBGA-48
IS65WV51216EBLL-45CTLA3	ISSI	获取价格	Standard SRAM, 512KX16, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44

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