Datasheet > IS65WV51216EBLL-45BA3

IS65WV51216EBLL-45BA3

更新时间： 2024-02-06 12:44:46

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器内存集成电路
页数	文件大小	规格书
18页	1340K
描述
Standard SRAM, 512KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, MO-207, VFBGA-48

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IS65WV51216EBLL-45BA3 技术参数

生命周期：	Active	包装说明：	VFBGA,
Reach Compliance Code：	unknown	风险等级：	5.73
最长访问时间：	45 ns	JESD-30 代码：	R-PBGA-B48
长度：	8 mm	内存密度：	8388608 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	16
功能数量：	1	端子数量：	48
字数：	524288 words	字数代码：	512000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-40 °C	组织：	512KX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	VFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	座面最大高度：	1 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.2 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	AUTOMOTIVE
端子形式：	BALL	端子节距：	0.75 mm
端子位置：	BOTTOM	宽度：	6 mm
Base Number Matches：	1

IS65WV51216EBLL-45BA3 数据手册

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IS62/65WV51216EALL

IS62/65WV51216EBLL

PRELIMINARY INFORMATION

MAY 2014

512Kx16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

KEY FEATURES

DESCRIPTION

The IS62WV51216EALL/ IS62WV51216EBLL are

high-speed, 8M bit static RAMs organized as 512K

words by 16 bits. It is fabricated using 's high-

performance CMOS technology. This highly reliable

process coupled with innovative circuit design

techniques, yields high-performance and low power

consumption devices.



High-speed access time: 45ns, 55ns

CMOS low power operation

– 36 mW (typical) operating

– 12 µW (typical) CMOS standby

TTL compatible interface levels

Single power supply



–1.65V—2.2V VDD (62/65WV51216EALL)

– 2.2V--3.6V VDD (62/65WV51216EBLL)

Data control for upper and lower bytes

Automotive temperature (-40^oC to +125^oC)

When

(deselected) or when

and are HIGH, the device assumes a standby

is HIGH (deselected) or when CS2 is low



is low , CS2 is high and both

mode at which the power dissipation can be reduced

down with CMOS input levels.

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs. The active LOW

Write Enable

the memory. A data byte allows Upper Byte

Lower Byte ( access.

controls both writing and reading of

and

The IS62WV51216EALL and IS62WV51216EBLL are

packaged in the JEDEC standard 48-pin mini BGA

(6mm x8mm), 44-Pin TSOP (TYPE II) and 48-pin

TSOP (TYPE l).

BLOCK DIAGRAM

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. 0A

05/07/2014

12 3 4 5 6 7...18

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与IS65WV51216EBLL-45BA3相关器件

型号	品牌	获取价格	描述	数据表
IS65WV51216EBLL-45CTLA3	ISSI	获取价格	Standard SRAM, 512KX16, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS65WV51216EFALL-55BLA3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
IS65WV51216EFBLL-55B3A3	ISSI	获取价格	SRAM,
IS65WV51216EFBLL-55BA3	ISSI	获取价格	SRAM,
IS65WV51216EFBLL-55CTLA3	ISSI	获取价格	SRAM,
IS65WV51216GALL-55CTLA3	ISSI	获取价格	Standard SRAM,
IS65WV51216HBLL-55B2A3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
IS65WV51216HBLL-55BA3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
IS65WV5128DALL	ISSI	获取价格	512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV5128EHBLL-55BLA3	ISSI	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, MINIBGA-48/36

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