Datasheet > IS65WV25616DBLL-45CTLA1

IS65WV25616DBLL-45CTLA1

更新时间： 2024-02-06 07:13:23

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
17页	414K
描述
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

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IS62WV25616DALL/DBLL, IS65WV25616DBLL

256K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC SRAM

JUNE 2013

FEATURES

DESCRIPTION

TheꢀISSIꢀIS62WV25616DALLꢀandꢀIS62/65WV25616DBLLꢀ

areꢀꢀhigh-speed,ꢀlowꢀpower,ꢀ4MꢀbitꢀSRAMsꢀorganizedꢀasꢀ

256K words by 16 bits. It is fabricated using ISSI's high-

performanceꢀCMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀ

coupled with innovative circuit design techniques, yields

high-performance and low power consumption devices.

•ꢀ High-speed access time: 35, 45, 55 ns

•ꢀ CMOSꢀlowꢀpowerꢀoperation

30 mW (typical) operating

ꢀ 6ꢀµWꢀ(typical)ꢀCMOSꢀstandby

•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels

•ꢀ Singleꢀpowerꢀsupplyꢀꢀ

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselcted) or when CS1ꢀisꢀLOW,ꢀCS2ꢀisꢀHIGHꢀandꢀbothꢀ

LB and UB are HIGH, the device assumes a standby mode

at which the power dissipation can be reduced down with

CMOSꢀinputꢀlevels.

1.65V--2.2V V^dd(IS62WV25616DALL)

2.5V--3.6V V^ddꢀ(IS62/65WV25616DBLL)

Easy memory expansion is provided by using Chip Enable

andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ(WE)

controls both writing and reading of the memory.A data byte

allows Upper Byte (UB)ꢀandꢀLowerꢀByteꢀ(LB) access.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefresh

required

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

TheꢀIS62WV25616DALLꢀandꢀIS62/65WV25616DBLLꢀareꢀ

packaged in the JEDEC standard 44-PinꢀTSOPꢀ(TYPEꢀII)

and 48-pin mini BGA (6mmx8mm).

•ꢀ 2ꢀCSꢀoptionꢀavailable

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-

pected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon

Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. D

06/19/2013

12 3 4 5 6 7...17

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与IS65WV25616DBLL-45CTLA1相关器件

型号	品牌	获取价格	描述	数据表
IS65WV25616DBLL-55CTLA3	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV2568DALL	ISSI	获取价格	TTL compatible interface levels
IS65WV2568DBLL	ISSI	获取价格	TTL compatible interface levels
IS65WV2568EALL	ISSI	获取价格	Three state outputs
IS65WV2568EBLL	ISSI	获取价格	Three state outputs
IS65WV51216EALL	ISSI	获取价格	TTL compatible interface levels
IS65WV51216EBLL	ISSI	获取价格	TTL compatible interface levels
IS65WV51216EBLL-45BA3	ISSI	获取价格	Standard SRAM, 512KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, MO-207, VFBGA-48
IS65WV51216EBLL-45CTLA3	ISSI	获取价格	Standard SRAM, 512KX16, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS65WV51216EFALL-55BLA3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48

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