Datasheet > IS65WV51216EALL

IS65WV51216EALL

更新时间： 2024-02-28 15:21:41

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
18页	1350K
描述
TTL compatible interface levels

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中文翻译

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数据手册

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IS65WV51216EALL 数据手册

IS62/65WV51216EALL

IS62/65WV51216EBLL

NOVEMBER 2014

512Kx16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

KEY FEATURES

DESCRIPTION

The IS62WV51216EALL/ IS62WV51216EBLL are

high-speed, 8M bit static RAMs organized as 512K

words by 16 bits. It is fabricated using 's high-

performance CMOS technology. This highly reliable

process coupled with innovative circuit design

techniques, yields high-performance and low power

consumption devices.



High-speed access time: 45ns, 55ns

CMOS low power operation

– 36 mW (typical) operating

– 12 µW (typical) CMOS standby

TTL compatible interface levels

Single power supply



–1.65V—2.2V VDD (62/65WV51216EALL)

– 2.2V--3.6V VDD (62/65WV51216EBLL)

Data control for upper and lower bytes

Automotive temperature (-40^oC to +125^oC)

When

(deselected) or when

and are HIGH, the device assumes a standby

is HIGH (deselected) or when CS2 is low



is low , CS2 is high and both

mode at which the power dissipation can be reduced

down with CMOS input levels.

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs. The active LOW

Write Enable

the memory. A data byte allows Upper Byte

Lower Byte ( access.

controls both writing and reading of

and

The IS62WV51216EALL and IS62WV51216EBLL are

packaged in the JEDEC standard 48-pin mini BGA

(6mm x8mm), 44-Pin TSOP (TYPE II) and 48-pin

TSOP (TYPE l).

BLOCK DIAGRAM

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. B

10/21/2014

12 3 4 5 6 7...18

中文翻译

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与IS65WV51216EALL相关器件

型号	品牌	获取价格	描述	数据表
IS65WV51216EBLL	ISSI	获取价格	TTL compatible interface levels
IS65WV51216EBLL-45BA3	ISSI	获取价格	Standard SRAM, 512KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, MO-207, VFBGA-48
IS65WV51216EBLL-45CTLA3	ISSI	获取价格	Standard SRAM, 512KX16, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS65WV51216EFALL-55BLA3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
IS65WV51216EFBLL-55B3A3	ISSI	获取价格	SRAM,
IS65WV51216EFBLL-55BA3	ISSI	获取价格	SRAM,
IS65WV51216EFBLL-55CTLA3	ISSI	获取价格	SRAM,
IS65WV51216GALL-55CTLA3	ISSI	获取价格	Standard SRAM,
IS65WV51216HBLL-55B2A3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
IS65WV51216HBLL-55BA3	ISSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48

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