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IS65WV25616BLL-70TA2 PDF预览

IS65WV25616BLL-70TA2

更新时间: 2024-01-03 00:29:09
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
13页 99K
描述
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

IS65WV25616BLL-70TA2 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:PLASTIC, TSOP2-44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.78
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.415 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:105 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.2 mm最大待机电流:0.00004 A
最小待机电流:1.2 V子类别:SRAMs
最大压摆率:0.04 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IS65WV25616BLL-70TA2 数据手册

 浏览型号IS65WV25616BLL-70TA2的Datasheet PDF文件第2页浏览型号IS65WV25616BLL-70TA2的Datasheet PDF文件第3页浏览型号IS65WV25616BLL-70TA2的Datasheet PDF文件第4页浏览型号IS65WV25616BLL-70TA2的Datasheet PDF文件第5页浏览型号IS65WV25616BLL-70TA2的Datasheet PDF文件第6页浏览型号IS65WV25616BLL-70TA2的Datasheet PDF文件第7页 
®
IS65WV25616ALL  
IS65WV25616BLL  
ISSI  
256K x 16 LOW VOLTAGE, ULTRA  
LOW POWER CMOS STATIC SRAM  
PRELIMINARYINFORMATION  
JUNE2006  
FEATURES  
DESCRIPTION  
TheISSIIS65WV25616ALL/IS65WV25616BLL are high-  
speed,lowpower,4MbitSRAMsorganizedas256Kwords  
by 16 bits. It is fabricated using ISSI's high-performance  
CMOS technology. This highly reliable process coupled  
with innovative circuit design techniques, yields high-  
performance and low power consumption devices.  
• High-speed access time: 55ns, 70ns  
• CMOS low power operation  
36 mW (typical) operating  
9 µW (typical) CMOS standby  
• TTL compatible interface levels  
• Single power supply  
WhenCS1isHIGH(deselected)orwhenCS1isLOW,and  
both LB and UB are HIGH, the device assumes a standby  
modeatwhichthepowerdissipationcanbereduceddown  
with CMOS input levels.  
1.65V--2.2V VDD (65WV25616ALL)  
2.5V--3.6V VDD (65WV25616BLL)  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs. The active LOW Write Enable  
(WE) controls both writing and reading of the memory. A  
data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• Three state outputs  
• Data control for upper and lower bytes  
TEMPERATURE OFFERINGS:  
Option A1: -40°C to +85°C  
Option A2: -40°C to +105°C  
Option A3: -40°C to +125°C  
Lead-freeavailable  
TheIS65WV25616BALL/65WV25616BLL arepackagedin  
the JEDEC standard 44-Pin TSOP (TYPE II).  
FUNCTIONAL BLOCK DIAGRAM  
256K x 16  
MEMORY ARRAY  
A0-A17  
DECODER  
V
DD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CS1  
OE  
WE  
UB  
LB  
CONTROL  
CIRCUIT  
25616LL_BLK.eps  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. 00B  
06/20/06  

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