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IS65WV1288DBLL-45TLA3 PDF预览

IS65WV1288DBLL-45TLA3

更新时间： 2024-01-13 22:31:09
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 442K
描述
IC SRAM 1M PARALLEL 32TSOP I

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IS65WV1288DBLL-45TLA3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantFactory Lead Time：12 weeks
风险等级：5.84最长访问时间：45 ns
I/O 类型：COMMONJESD-30 代码：R-PDSO-G32
内存密度：1048576 bit内存集成电路类型：STANDARD SRAM
内存宽度：8端子数量：32
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-40 °C组织：128KX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP32,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：PARALLEL电源：2.5/3.3 V
认证状态：Not Qualified筛选级别：AEC-Q100
最大待机电流：0.000018 A最小待机电流：1.2 V
子类别：SRAMs最大压摆率：0.012 mA
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL

IS65WV1288DBLL-45TLA3 数据手册

 浏览型号IS65WV1288DBLL-45TLA3的Datasheet PDF文件第2页浏览型号IS65WV1288DBLL-45TLA3的Datasheet PDF文件第3页浏览型号IS65WV1288DBLL-45TLA3的Datasheet PDF文件第4页浏览型号IS65WV1288DBLL-45TLA3的Datasheet PDF文件第5页浏览型号IS65WV1288DBLL-45TLA3的Datasheet PDF文件第6页浏览型号IS65WV1288DBLL-45TLA3的Datasheet PDF文件第7页 
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
128K x 8 LOW VOLTAGE,  
NOVEMBER 2016  
ULTRA LOW POWER CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
TheꢀISSIꢀIS62/65WV1288DALLꢀandꢀIS62/65WV1288DBLLꢀ  
areꢀ ꢀ high-speed,ꢀ 1Mꢀ bitꢀ staticꢀ RAMsꢀ organizedꢀ asꢀ  
128Kꢀwordsꢀbyꢀ8ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI's high-  
performanceꢀCMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀ  
coupled with innovative circuit design techniques, yields  
high-performance and low power consumption devices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀꢀ35ns,ꢀ45ns,ꢀ55ns  
•ꢀ CMOSꢀlowꢀpowerꢀoperation:  
12 mW (typical) operating  
ꢀ ꢀ4ꢀµWꢀ(typical)ꢀCMOSꢀstandby  
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels  
•ꢀ Singleꢀpowerꢀsupply:ꢀꢀ  
When CS1ꢀisꢀHIGHꢀ(deselected)ꢀorꢀwhenꢀCS2ꢀisꢀLOW  
(deselected), the device assumes a standby mode at  
which the power dissipation can be reduced down with  
CMOSꢀinputꢀlevels.  
ꢀ ꢀ1.65V--2.2VꢀVdd (62WV1288dALL)  
ꢀ ꢀ2.3V--3.6VꢀVdd (62WV1288dBLL)  
Easy memory expansion is provided by using Chip Enable  
andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ  
(WE) controls both writing and reading of the memory.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefresh  
required  
TheꢀIS62/65WV1288DALLꢀandꢀIS62/65WV1288DBLLꢀareꢀ  
packagedꢀinꢀtheꢀJEDECꢀstandardꢀ32-pinꢀTSOPꢀ(TYPEI),ꢀ  
sTSOPꢀ(TYPEI),ꢀSOP,ꢀandꢀ36-pinꢀminiꢀBGA.  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Industrialꢀandꢀautomotiveꢀtemperatureꢀsupport  
•ꢀ Lead-freeꢀavailableꢀ  
FUNCTIONAL BLOCK DIAGRAM  
128K x 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CS2  
CS1  
OE  
CONTROL  
CIRCUIT  
WE  
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-  
est version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-  
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications  
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. C1  
11/1/2016  
1234567...16

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