Datasheet > IS65WV20488EBLL

IS65WV20488EBLL

更新时间： 2024-12-02 01:23:31

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
14页	656K
描述
TTL compatible interface levels

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数据手册

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IS65WV20488EBLL 数据手册

IS62/65WV20488EALL

IS62/65WV20488EBLL

JANUARY 2015

2Mx8 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

FEATURES

DESCRIPTION

ISSI

IS62WV20488EALL/BLL and



High-speed access time: 45ns, 55ns

The



CMOS low power operation

– 30 mW (typical) operating

IS65WV20488EALL/BLL are high-speed, 16M bit static

RAMs organized as 2M words by 8 bits. It is fabricated using

– 12 µW (typical) CMOS standby

TTL compatible interface levels

Single power supply

ISSI

's high-performance CMOS technology. This highly



reliable process coupled with innovative circuit design

techniques, yields high-performance and low power

consumption devices.

–1.65V—1.98V Vdd (62/65WV20488EALL)

– 2.2V--3.6V Vdd (62/65WV20488EBLL)

Fully static operation: no clock or refresh

required

When

is HIGH (deselected) or when CS2 is LOW



(deselected), the device assumes a standby mode at which

the power dissipation can be reduced down with CMOS input

levels.

Industrial (-40^oC to +85^oC) and Automotive

(-40^oC to +125^oC) temperature support

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

controls both writing and reading of the memory.

The IS62WV20488EALL/BLL and

IS65WV20488EALL/BLL are packaged in the JEDEC

standard 48-pin mini BGA (6mm x 8mm).

BLOCK DIAGRAM

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A

12/12/2014

12 3 4 5 6 7...14

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与IS65WV20488EBLL相关器件

型号	品牌	获取价格	描述	数据表
IS65WV25616ALL	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616ALL-70CTLA1	ISSI	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, TSOP2-44
IS65WV25616ALL-70CTLA3	ISSI	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, TSOP2-44
IS65WV25616ALL-70TA1	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616ALL-70TA2	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616ALL-70TA3	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL-55BLA1	ISSI	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48
IS65WV25616BLL-55CTLA1	ISSI	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 6 X 8 MM, LEAD FREE, PLASTIC, TSOP2-44
IS65WV25616BLL-55TA1	ISSI	获取价格	256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

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