Datasheet > IS65WV12816BLL-70BA2

IS65WV12816BLL-70BA2

更新时间： 2024-12-02 07:16:55

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
17页	383K
描述
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

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IS65WV12816ALL

IS65WV12816BLL

MARCH 2013

128K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION

FEATURES

The ISSI IS65WV12816ALL/ IS65WV12816BLL are

high-speed, 2M bit static RAMs organized as 128K words

by 16 bits. It is fabricated using ISSI's high-performance

CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

• High-speed access time: 55ns, 70ns

• CMOS low power operation:

36 mW (typical) operating

9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply:

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1 is LOW, CS2 is HIGH and both

LBandUBareHIGH, thedeviceassumesastandbymode

at which the power dissipation can be reduced down with

CMOS input levels.

1.65V to 2.2V Vdd (65WV12816ALL)

2.5V to 3.6V Vdd (65WV12816BLL)

• Fully static operation: no clock or refresh

Easymemory expansion is provided byusing Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

required

• Three state outputs

• Data control for upper and lower bytes

• 2CS Option Available

• Temperature Offerings:

The IS65WV12816ALL and IS65WV12816BLL are

packged in the JEDEC standard 48-pin mini BGA (6mm

x 8mm) and 44-Pin TSOP (TYPE II).

Option A: 0 to 70^oC

Option A1: –40 to +85^oC

Option A2: –40 to +105^oC

Option A3: –40 to +125^oC

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

128K x 16

MEMORY ARRAY

A0-A16

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

03/6/13

12 3 4 5 6 7...17

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与IS65WV12816BLL-70BA2相关器件

型号	品牌	获取价格	描述	数据表
IS65WV12816BLL-70BA3	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816BLL-70TA	ISSI	获取价格	128KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44
IS65WV12816BLL-70TA2	ISSI	获取价格	128KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44
IS65WV12816BLL-70TA3	ISSI	获取价格	128KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44
IS65WV12816DALL/DBLL	ISSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816EALL	ISSI	获取价格	Three state outputs
IS65WV12816EBLL	ISSI	获取价格	Three state outputs
IS65WV1288BLL-55HLA1	ISSI	获取价格	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, LEAD FREE, PLASTIC, STSOP1-32
IS65WV1288BLL-55HLA3	ISSI	获取价格	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, LEAD FREE, PLASTIC, TSOP1-32
IS65WV1288BLL-55TLA1	ISSI	获取价格	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, LEAD FREE, PLASTIC, TSOP1-32

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