Datasheet > IS65WV10248DALL

IS65WV10248DALL

更新时间： 2024-09-29 01:23:31

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
15页	490K
描述
TTL compatible interface levels

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS65WV10248DALL 数据手册

IS62WV10248DALL/BLL

IS65WV10248DALL/BLL

1M x 8 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

MAY 2009

FEATURES

DESCRIPTION

TheꢀISSIꢀIS62WV10248DALL/ꢀIS62WV10248DBLLꢀareꢀ

high-speed,ꢀ8MꢀbitꢀstaticꢀRAMsꢀorganizedꢀasꢀ1Mꢀwordsꢀ

byꢀ8ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀ

CMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀ

withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ high-

performance and low power consumption devices.

•ꢀ High-speedꢀaccessꢀtime:ꢀ45ns,ꢀ55ns

•ꢀ CMOSꢀlowꢀpowerꢀoperation

– 30 mW (typical) operating

ꢀ –ꢀ12ꢀµWꢀ(typical)ꢀCMOSꢀstandby

•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels

•ꢀ Singleꢀpowerꢀsupplyꢀꢀ

When CS1ꢀisꢀHIGHꢀ(deselected)ꢀorꢀwhenꢀCS2ꢀisꢀLOW

(deselected), the device assumes a standby mode at

which the power dissipation can be reduced down with

CMOSꢀinputꢀlevels.

ꢀ –ꢀ1.65V--2.2VꢀV^{d d}(62/65WV10248dALL)

ꢀ –ꢀ2.4V--3.6VꢀV^{d d}(62/65WV10248dBLL)

Easy memory expansion is provided by using Chip Enable

andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ

(WE) controls both writing and reading of the memory.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefresh

required

Theꢀ IS62WV10248DALLꢀ andꢀ IS62WV10248DBLLꢀ areꢀ

packagedꢀinꢀtheꢀJEDECꢀstandardꢀ48-pinꢀminiꢀBGAꢀ(9mmꢀ

x 11mm) and 44-PinꢀTSOPꢀ(TYPEꢀII).

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ Automotiveꢀtemperatureꢀ(-40^oC to +125^oC)

•ꢀ Lead-freeꢀavailable

FUNCTIONAL BLOCK DIAGRAM

1M x 8

MEMORY ARRAY

A0-A19

DECODER

VDD

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CS2

CS1

CONTROL

CIRCUIT

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

05/11/09

12 3 4 5 6 7...15

中文翻译

下载PDF

与IS65WV10248DALL相关器件

型号	品牌	获取价格	描述	数据表
IS65WV10248EALL	ISSI	获取价格	Data control for upper and lower bytes
IS65WV10248EBLL-45CTLA3	ISSI	获取价格	Standard SRAM, 1MX8, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS65WV12816ALL	ISSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816ALL-70B2A2	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70B2A3	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70BA	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70BA1	ISSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS65WV12816ALL-70TA2	ISSI	获取价格	128KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44
IS65WV12816ALL-70TA3	ISSI	获取价格	128KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44
IS65WV12816BLL	ISSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

与IS65WV10248DALL相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

24
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

21
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

20
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

32

产品中心

服务支持

精选活动

关于我们

帮助中心

IS65WV10248DALL

IS65WV10248DALL 数据手册

与IS65WV10248DALL相关器件

与IS65WV10248DALL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS65WV10248DALL

IS65WV10248DALL 数据手册

与IS65WV10248DALL相关器件

与IS65WV10248DALL相关文章

您还可以找

您在本页遇到什么问题？