IS65LV256AL-45UA3

更新时间： 2024-02-22 17:06:58

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
14页	105K
描述
32K x 8 LOW VOLTAGE CMOS STATIC RAM

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IS65LV256AL-45UA3 数据手册

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IS65LV256AL

IS62LV256AL

ISSI

32K x 8 LOW VOLTAGE

CMOS STATIC RAM

MARCH 2006

FEATURES

DESCRIPTION

The ISSI IS62/65LV256AL is a very high-speed, low

power, 32,768-word by 8-bit static RAM. It is fabricated

using ISSI's high-performance CMOS technology. This

highly reliable process coupled with innovative circuit

design techniques, yields access times as fast as 15 ns

maximum.

• High-speed access time: 20, 45 ns

• Automatic power-down when chip is deselected

• CMOS low power operation

— 17 µW (typical) CMOS standby

— 50 mW (typical) operating

• TTL compatible interface levels

• Single 3.3V power supply

When CE is HIGH (deselected), the device assumes a

standbymodeatwhichthepowerdissipationisreducedto

150 µW (typical) with CMOS input levels.

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using an active

LOW Chip Enable (CE). The active LOW Write Enable

(WE) controls both writing and reading of the memory.

• Three-state outputs

• Industrial and Automotive temperatures avail-

able

The IS62/65LV256AL is available in the JEDEC standard

28-pin SOJ, 28-pin SOP, and the 28-pin 450-mil TSOP

package.

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

32K x 8

MEMORY ARRAY

A0-A14

DECODER

VDD

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

03/17/06

12 3 4 5 6 7...14

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