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IS65WV102416BLL-25TA3 PDF预览

IS65WV102416BLL-25TA3

更新时间: 2024-01-14 21:17:35
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
17页 187K
描述
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

IS65WV102416BLL-25TA3 数据手册

 浏览型号IS65WV102416BLL-25TA3的Datasheet PDF文件第2页浏览型号IS65WV102416BLL-25TA3的Datasheet PDF文件第3页浏览型号IS65WV102416BLL-25TA3的Datasheet PDF文件第4页浏览型号IS65WV102416BLL-25TA3的Datasheet PDF文件第5页浏览型号IS65WV102416BLL-25TA3的Datasheet PDF文件第6页浏览型号IS65WV102416BLL-25TA3的Datasheet PDF文件第7页 
IS62WV102416ALL  
IS62WV102416BLL  
IS65WV102416BLL  
1M x 16 HIGH-SPEED LOW POWER  
ASYNCHRONOUS CMOS STATIC RAM  
JANUARY2008  
FEATURES  
• High-speed access times:  
25, 35 ns  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for greater  
noise immunity  
DESCRIPTION  
TheISSIIS62WV102416ALL/BLLandIS65WV102416BLL  
are high-speed, 16M-bit static RAMs organized as 1024K  
wordsby16bits. ItisfabricatedusingISSI'shigh-perform-  
anceCMOStechnology.Thishighlyreliableprocesscoupled  
with innovative circuit design techniques, yields high-  
performance and low power consumption devices.  
• Easy memory expansion with CS1 and OE  
options  
CS1 power-down  
• Fully static operation: no clock or refresh  
required  
When CS1 is HIGH (deselected) or when CS2 is LOW  
(deselected) or when CS1 is LOW, CS2 is HIGH and both  
LBandUBareHIGH, thedeviceassumesastandbymode  
at which the power dissipation can be reduced down with  
CMOS input levels.  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs. The active LOW Write Enable  
(WE) controls both writing and reading of the memory. A  
data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• TTL compatible inputs and outputs  
• Single power supply  
VDD 1.65V to 2.2V (IS62WV102416ALL)  
speed = 35ns for VDD 1.65V to 2.2V  
VDD 2.4V to 3.6V (IS62/65WV102416BLL)  
speed = 25ns for VDD 2.4V to 3.6V  
• Packages available:  
The device is packaged in the JEDEC standard 48-pin  
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).  
48-ball miniBGA (9mm x 11mm)  
– 48-pin TSOP (Type I)  
• Industrial and Automotive Temperature Support  
• Lead-free available  
• Data control for upper and lower bytes  
FUNCTIONAL BLOCK DIAGRAM  
1024K x 16  
MEMORY ARRAY  
A0-A19  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CS1  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. A  
01/18/08  

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