Datasheet > IS65C6416AL

IS65C6416AL

更新时间： 2024-11-29 21:54:15

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
17页	92K
描述
64K x 16 HIGH-SPEED CMOS STATIC RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS65C6416AL 数据手册

IS61C6416AL IS64C6416AL

IS62C6416AL IS65C6416AL

ISSI

64K x 16 HIGH-SPEED CMOS STATIC RAM

JANUARY2005

FEATURES

DESCRIPTION

The ISSIIS61C6416AL, IS62C6416AL, IS64C6416AL and

IS65C6416AL are high-speed, 1,048,576-bit static RAMs

organized as 65,536 words by 16 bits. They are fabricated

usingISSI'shigh-performanceCMOStechnology.Thishighly

reliable process coupled with innovative circuit design tech-

niques, yields access times as fast as 12 ns with low power

consumption.

IS61C6416AL and IS64C6416AL

• High-speed access time: 12 ns, 15ns

• Low Active Power: 175 mW (typical)

• Low Standby Power: 1 mW (typical)

CMOS standby

IS62C6416AL and IS65C6416AL

When CE is HIGH (deselected), the device assumes a

standbymodeatwhichthepowerdissipationcanbereduced

down with CMOS input levels.

• High-speed access time: 35 ns, 45ns

• Low Active Power: 50 mW (typical)

• Low Standby Power: 100 µW (typical)

CMOS standby

Easy memory expansion is provided by using Chip Enable

andOutputEnableinputs,CEandOE.TheactiveLOWWrite

Enable(WE)controlsbothwritingandreadingofthememory.

A data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

• TTL compatible interface levels

• Single 5V ± 10% power supply

• Fully static operation: no clock or refresh

required

The IS61C6416AL, IS62C6416AL, IS64C6416AL and

IS65C6416AL are packaged in the JEDEC standard 44-pin

400-mil SOJ and 44-pin TSOP (Type II).

• Available in 44-pin SOJ package and

44-pin TSOP (Type II)

• Commercial, Industrial and Automotive tempera-

ture ranges available

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

64K x 16

MEMORY ARRAY

A0-A15

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

01/17/05

12 3 4 5 6 7...17

中文翻译

下载PDF

与IS65C6416AL相关器件

型号	品牌	获取价格	描述	数据表
IS65C6416AL-45KA3	ISSI	获取价格	64K x 16 HIGH-SPEED CMOS STATIC RAM
IS65C6416AL-45TA3	ISSI	获取价格	64K x 16 HIGH-SPEED CMOS STATIC RAM
IS65LV256AL	ISSI	获取价格	32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS65LV256AL_12	ISSI	获取价格	32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS65LV256AL-45TA3	ISSI	获取价格	32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS65LV256AL-45TLA3	ISSI	获取价格	32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS65LV256AL-45UA3	ISSI	获取价格	32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS65LV256AL-45ULA3	ISSI	获取价格	32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS65WV102416BLL	ISSI	获取价格	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS65WV102416BLL-25MA3	ISSI	获取价格	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

与IS65C6416AL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

52
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

IS65C6416AL

IS65C6416AL 数据手册

与IS65C6416AL相关器件

与IS65C6416AL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS65C6416AL

IS65C6416AL 数据手册

与IS65C6416AL相关器件

与IS65C6416AL相关文章

您还可以找

您在本页遇到什么问题？