Datasheet > IS61C64AL

IS61C64AL

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
13页	96K
描述
8K x 8 HIGH-SPEED CMOS STATIC RAM

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数据手册

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IS61C64AL 数据手册

IS61C64AL

ISSI

READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾(Over Operating Range)

-10 ns

Min. Max

-12 ns

Min. Max.

Symbol

tRC

Parameter

Unit

Read Cycle Time

Address Access Time

Output Hold Time

CE Access Time

OE Access Time

OE to Low-Z Output

OE to High-Z Output

CE to Low-Z Output

CE to High-Z Output

CE toPower-Up

—

tAA

tOHA

tACS

—

tDOE

(2)

tLZOE

—

(2)

tHZOE

—

(2)

tLZCS

—

(2)

tHZCS

—

(3)

tPU

—

(3)

tPD

CEtoPower-Down

—

Notes:

1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V

and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested.

3. Not 100% tested.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Levels

Unit

0V to 3.0V

3 ns

1.5V

Output Load

See Figures 1 and 2

AC TEST LOADS

480 Ω

OUTPUT

255 Ω

5 pF

255 Ω

30 pF

Including

jig and

Including

jig and

scope

Figure 2

Figure 1

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

03/16/06

1 2 3 456 7 8...13

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